AT89C51ED2-RDTIM datasheet(9/24 Pages) ATMEL

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AT89C51RD2 / AT89C51ED2 QualPack

Rev. 0 – 2003 July

4.3 Wafer Level Reliability

4.3.1 Electromigration

Purpose:

To evaluate the AT56800, AT35500, and AT37000 processes for Metal 1, Metal 3 & Via Electromigration

Reliability. These 3 processes have the same steps for interconnect levels.

Test Parameters:

Metal 1 & Metal 3:

Sample Size = 15

Temp = 250C with Joule heating .

J = 3.5E06 A/cm2.

Via:

Sample Size = 15

Temp = 200C with Joule heating.

J = 2.5E06 A/cm2.

Black’s Equation Parameters:

Failure Criteria - 10% increase in resistance. Data taken every 1% change.

n = 2

Ea = 0.6eV

Lifetime Predictions:

Metal 1 :

Split 1 - Tf.1% exp = ~ 28 hrs

Tf.01% op = ~ 28 hrs x 39706 accel = 127 years.

(Sigma = 2.7118 hours, Acceltemp = 130, Accelcurrent = 306)

Metal 3 :

Split 3 - Tf.1% exp = ~ 140 hrs

Tf.01% op = ~ 140 hrs x 39706 accel = 634 years.

(Sigma = 1.8782 hours, Acceltemp = 130, Accelcurrent = 306)

VIA :

Split 4 - Tf.1% exp = ~ 22 hrs

Tf.1% op = ~ 22 hrs x 7144 accel = 18 years.

(Sigma = 2.59 hours, Acceltemp = 31.75, Accelcurrent = 225) (9/15 fails)

Conclusion:

All splits pass the minimum 10 years lifetime.

AT89C51ED2-RDTIM 数据表(PDF) 9 Page - ATMEL Corporation

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