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BQ28550-R1 数据表(PDF) 8 Page - Texas Instruments |
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BQ28550-R1 数据表(HTML) 8 Page - Texas Instruments |
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8 / 42 page  Not Recommended for New Designs bq28550-R1 SLUSAS4A – OCTOBER 2012 – REVISED SEPTEMBER 2014 www.ti.com Electrical Characteristics: Integrating ADC (Coulomb Counter) Characteristics (continued) TA = –40 to +85ºC, VBAT = 2.7 V to 5.5 V; Typical values stated, where TA = 25ºC and VBAT = 3.6 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VOS(SR) Input offset 10 µV INL Integral nonlinearity error ±0.007 ±0.034 FSR(1) Effective input ZIN(SR) 2.5 M Ω resistance(2) Ilkg(SR) Input leakage current(2) 0.3 µA (1) Full-scale reference (2) Specified by design. Not production tested. 6.12 Electrical Characteristics: ADC (Temperature and Cell Voltage) Characteristics TA = –40 to +85ºC, VBAT = 2.7 V to 5.5 V; Typical values stated, where TA = 25ºC and VBAT = 3.6 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VIN(ADC) Input voltage range –0.2 1 V Conversion time 125 ms tCONV(ADC) Resolution 14 15 bits VOS(ADC) Input offset 1 mV Effective input Z(ADC1) 8 M Ω resistance (TS) (1) bq28550-R1 is not measuring cell voltage. 8 M Ω Effective input Z(ADC2) resistance (BAT) (1) bq28550-R1 is measuring cell voltage. 100 k Ω Ilkg(ADC) Input leakage current (1) 0.3 µA (1) Specified by design. Not production tested. 6.13 Electrical Characteristics: Data Flash Memory Characteristics TA = –40 to +85ºC, VBAT = 2.7 V to 5.5 V; Typical values stated, where TA = 25ºC and VBAT = 3.6 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Data retention (1) 10 Years tDR Flash programming 20,000 Cycles write-cycles (1) Word programming time tWORDPROG 2 ms (1) Flash-write supply ICCPROG 5 10 mA current (1) (1) Specified by design. Not production tested. 6.14 Electrical Characteristics: Serial Communication Timing Characteristics TA = –40 to +85ºC, VBAT = 2.7 V to 5.5 V; Typical values stated, where TA = 25ºC and VBAT = 3.6 V (unless otherwise noted). Capacitance on serial interface pins SCL and SDA are 10 pF unless otherwise specified (1). PARAMETER TEST CONDITIONS MIN TYP MAX UNIT tr SCL/SDA rise time 300 ns tf SCL/SDA fall time 300 ns tw(H) SCL pulse width (high) 600 ns tw(L) SCL pulse width (low) 1.3 μs tsu(STA) Setup for repeated start 600 ns Start to first falling edge td(STA) 600 ns of SCL tsu(DAT) Data setup time 1 μs th(DAT) Data hold time 0 ns (1) Parameters assured by worst case test program execution in fast mode. 8 Submit Documentation Feedback Copyright © 2012–2014, Texas Instruments Incorporated Product Folder Links: bq28550-R1 |
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