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DP8430V 数据表(PDF) 32 Page - National Semiconductor (TI) |
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DP8430V 数据表(HTML) 32 Page - National Semiconductor (TI) |
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32 / 56 page ![]() 70 RAS and CAS Configuration Modes (Continued) 75 PAGEBURST MODE In a static column page or burst mode system the least significant bits must be tied to the column address in order to ensure that the pageburst accesses are to sequential memory addresses as shown in Figure 28 In a nibble mode system the least significant bits must be tied to the highest column and row address bits in order to ensure that sequential address bits are the ‘‘nibble’’ bits for nibble mode accesses (Figure 28) The ECAS inputs may then be tog- gled with the DP8430V31V32V’s address latches in fall- through mode while AREQ is asserted The ECAS inputs can also be used to select individual bytes When using nib- ble mode DRAMS the third and fourth address bits can be tied to the bank select inputs to perform memory interleav- ing In page or static column modes the two address bits after the page size can be tied to the bank select inputs to select a new bank if the page size is exceeded TLF11118 – 43 See table below for row column bank address bit map A0 A1 are used for byte addressing in this example Addresses Nibble Mode Page ModeStatic Column Mode Page Size 256 BitsPage 512 BitsPage 1024 BitsPage 2048 BitsPage Column C9R9 e A2A3 C0 – 7 e A2–9 C0–8 e A2–10 C0–9 e A2–11 C0–10 e A2–12 Address C0 – 8 e X C8–10 e X C910 e X C10 e X Row XX X X X Address B0 A4 A10 A11 A12 A13 B1 A5 A11 A12 A13 A14 Assume that the least significant address bits are used for byte addressing Given a 32-bit system A0A1 would be used for byte addressing X e DON’T CARE the user can do as he pleases Nibble mode values for R and C assume a system using 1 Mbit DRAMs FIGURE 28 Page Static Column Nibble Mode System 32 |
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