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DP8430V 数据表(PDF) 52 Page - National Semiconductor (TI) |
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DP8430V 数据表(HTML) 52 Page - National Semiconductor (TI) |
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52 / 56 page ![]() 130 AC Timing Parameters (Continued) Unless otherwise stated VCC e 50V g10% 0 C k TA k 70 C the output load capacitance is typical for 4 banks of 18 DRAMs per bank including trace capacitance (Note 2) Two different loads are specified CL e 50 pF loads on all outputs except CL e 150 pF loads on Q0–8 9 10 and WE or CH e 50 pF loads on all outputs except CH e 125 pF loads on RAS0–3 and CAS0–3 and CH e 380 pF loads on Q0–8 9 10 and WE Mode 1 Dual Access DP8430V31V32V-33 Number Symbol Parameter Description CL CH Min Max Min Max 450 tSADDCKG Row Address Setup to CLK High That Asserts RAS following a GRANTB 10 12 Port Change to Ensure tASR e 0ns 451 tPCKRASG CLK High to RAS Asserted 30 34 for Pending Access 452 tPCLKDL2 CLK to DTACK Asserted for Delayed 37 37 Accesses (Programmed as DTACK0) 453a tPCKCASG0 CLK High to CAS Asserted for Pending Access 81 88 (tRAH e 15 ns tASC e 0 ns) 453b tPCKCASG1 CLK High to CAS Asserted for Pending Access 91 98 (tRAH e 15 ns tASC e 10 ns) 453c tPCKCASG2 CLK High to CAS Asserted for Pending Access 91 98 (tRAH e 25 ns tASC e 0 ns) 453d tPCKCASG3 CLK High to CAS Asserted for Pending Access 101 108 (tRAH e 25 ns tASC e 10 ns) 454 tSBADDCKG Bank Address Valid Setup to CLK High 33 that Asserts RAS for Pending Access 455 tSADSCK0 ADS Asserted Setup to CLK High 8 8 52 |
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