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DP8430V 数据表(PDF) 11 Page - National Semiconductor (TI) |
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DP8430V 数据表(HTML) 11 Page - National Semiconductor (TI) |
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11 / 56 page ![]() 30 Programming and Resetting (Continued) 33 PROGRAMMING BIT DEFINITIONS (Continued) Symbol Description R5 R4 WAIT DTACK during Burst (See Section 512 or 522) 0 0 NO WAIT STATES If R7 e 0 during programming WAIT will remain negated during burst portion of access If R7 e 1 programming DTACK will remain asserted during burst portion of access 0 1 1T If R7 e 0 during programming WAIT will assert when the ECAS inputs are negated with AREQ asserted WAIT will negate from the positive edge of CLK after the ECASs have been asserted If R7 e 1 during programming DTACK will negate when the ECAS inputs are negated with AREQ asserted DTACK will assert from the positive edge of CLK after the ECASs have been asserted 1 0 T If R7 e 0 during programming WAIT will assert when the ECAS inputs are negated with AREQ asserted WAIT will negate on the negative level of CLK after the ECASs have been asserted If R7 e 1 during programming DTACK will negate when the ECAS inputs are negated with AREQ asserted DTACK will assert from the negative level of CLK after the ECASs have been asserted 1 1 0T If R7 e 0 during programming WAIT will assert when the ECAS inputs are negated WAIT will negate when the ECAS inputs are asserted If R7 e 1 during programming DTACK will negate when the ECAS inputs are negated DTACK will assert when the ECAS inputs are asserted R3 R2 WAIT DTACK Delay Times (See Section 511 or 521) 0 0 NO WAIT STATES If R7 e 0 during programming WAIT will remain high during non-delayed accesses WAIT will negate when RAS is negated during delayed accesses NO WAIT STATES If R7 e 1 during programming DTACK will be asserted when RAS is asserted 0 1 T If R7 e 0 during programming WAIT will negate on the negative level of CLK after the access RAS 1T If R7 e 1 during programming DTACK will be asserted on the positive edge of CLK after the access RAS 1 0 NO WAIT STATES T If R7 e 0 during programming WAIT will remain high during non-delayed accesses WAIT will negate on the negative level of CLK after the access RAS during delayed accesses T If R7 e 1 during programming DTACK will be asserted on the negative level of CLK after the access RAS 1 1 1T If R7 e 0 during programming WAIT will negate on the positive edge of CLK after the access RAS 1 T If R7 e 1 during programming DTACK will be asserted on the negative level of CLK after the positive edge of CLK after the access RAS R1 R0 RAS Low and RAS Precharge Time 0 0 RAS asserted during refresh e 2 positive edges of CLK RAS precharge time e 1 positive edge of CLK RAS will start from the first positive edge of CLK after GRANTB transitions (DP8432V) 0 1 RAS asserted during refresh e 3 positive edges of CLK RAS precharge time e 2 positive edges of CLK RAS will start from the second positive edge of CLK after GRANTB transitions (DP8432V) 1 0 RAS asserted during refresh e 2 positive edges of CLK RAS precharge time e 2 positive edges of CLK RAS will start from the first positive edge of CLK after GRANTB transitions (DP8432V) 1 1 RAS asserted during refresh e 4 positive edges of CLK RAS precharge time e 3 positive edges of CLK RAS will start from the second positive edge of CLK after GRANTB transitions (DP8432V) 11 |
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