数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

DP8430V 数据表(PDF) 11 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
部件名 DP8430V
功能描述  microCMOS Programmable 256k/1M/4M Dynamic RAM Controller/Drivers
PDF  56 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

DP8430V 数据表(HTML) 11 Page - National Semiconductor (TI)

Back Button DP8430V Datasheet HTML 7Page - National Semiconductor (TI) DP8430V Datasheet HTML 8Page - National Semiconductor (TI) DP8430V Datasheet HTML 9Page - National Semiconductor (TI) DP8430V Datasheet HTML 10Page - National Semiconductor (TI) DP8430V Datasheet HTML 11Page - National Semiconductor (TI) DP8430V Datasheet HTML 12Page - National Semiconductor (TI) DP8430V Datasheet HTML 13Page - National Semiconductor (TI) DP8430V Datasheet HTML 14Page - National Semiconductor (TI) DP8430V Datasheet HTML 15Page - National Semiconductor (TI) Next Button
Zoom Inzoom in Zoom Outzoom out
 11 / 56 page
background image
30 Programming and Resetting (Continued)
33 PROGRAMMING BIT DEFINITIONS
(Continued)
Symbol
Description
R5 R4
WAIT DTACK during Burst (See Section 512 or 522)
0 0
NO WAIT STATES If R7 e 0 during programming WAIT will remain negated during burst portion of access
If R7 e 1 programming DTACK will remain asserted during burst portion of access
0 1
1T If R7 e 0 during programming WAIT will assert when the ECAS inputs are negated with AREQ asserted
WAIT will negate from the positive edge of CLK after the ECASs have been asserted
If R7 e 1 during programming DTACK will negate when the ECAS inputs are negated with AREQ asserted
DTACK will assert from the positive edge of CLK after the ECASs have been asserted
1 0
T If R7 e 0 during programming WAIT will assert when the ECAS inputs are negated with AREQ asserted
WAIT will negate on the negative level of CLK after the ECASs have been asserted
If R7 e 1 during programming DTACK will negate when the ECAS inputs are negated with AREQ asserted
DTACK will assert from the negative level of CLK after the ECASs have been asserted
1 1
0T If R7 e 0 during programming WAIT will assert when the ECAS inputs are negated WAIT will negate when
the ECAS inputs are asserted
If R7 e 1 during programming DTACK will negate when the ECAS inputs are negated DTACK will assert when
the ECAS inputs are asserted
R3 R2
WAIT DTACK Delay Times (See Section 511 or 521)
0 0
NO WAIT STATES If R7 e 0 during programming WAIT will remain high during non-delayed accesses WAIT
will negate when RAS is negated during delayed accesses
NO WAIT STATES If R7 e 1 during programming DTACK will be asserted when RAS is asserted
0 1
T If R7 e 0 during programming WAIT will negate on the negative level of CLK after the access RAS
1T If R7 e 1 during programming DTACK will be asserted on the positive edge of CLK after the access RAS
1 0
NO WAIT STATES
T If R7 e 0 during programming WAIT will remain high during non-delayed accesses
WAIT will negate on the negative level of CLK after the access RAS during delayed accesses
T If R7 e 1 during programming DTACK will be asserted on the negative level of CLK after the access RAS
1 1
1T If R7 e 0 during programming WAIT will negate on the positive edge of CLK after the access RAS
1
T If R7 e 1 during programming DTACK will be asserted on the negative level of CLK after the positive edge
of CLK after the access RAS
R1 R0
RAS Low and RAS Precharge Time
0 0
RAS asserted during refresh e 2 positive edges of CLK
RAS precharge time e 1 positive edge of CLK
RAS will start from the first positive edge of CLK after GRANTB transitions (DP8432V)
0 1
RAS asserted during refresh e 3 positive edges of CLK
RAS precharge time e 2 positive edges of CLK
RAS will start from the second positive edge of CLK after GRANTB transitions (DP8432V)
1 0
RAS asserted during refresh e 2 positive edges of CLK
RAS precharge time e 2 positive edges of CLK
RAS will start from the first positive edge of CLK after GRANTB transitions (DP8432V)
1 1
RAS asserted during refresh e 4 positive edges of CLK
RAS precharge time e 3 positive edges of CLK
RAS will start from the second positive edge of CLK after GRANTB transitions (DP8432V)
11



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com