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DP8430V 数据表(PDF) 40 Page - National Semiconductor (TI) |
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DP8430V 数据表(HTML) 40 Page - National Semiconductor (TI) |
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40 / 56 page ![]() 130 AC Timing Parameters (Continued) Unless otherwise stated VCC e 50V g10% 0 C k TA k 70 C the output load capacitance is typical for 4 banks of 18 DRAMs per bank including trace capacitance (Note 2) Two different loads are specified CL e 50 pF loads on all outputs except CL e 150 pF loads on Q0–8 9 10 and WE or CH e 50 pF loads on all outputs except CH e 125 pF loads on RAS0–3 and CAS0–3 and CH e 380 pF loads on Q0–8 9 10 and WE Common Parameter DP8430V31V32V-33 Number Symbol Description CL CH Min Max Min Max 1fCLK CLK Frequency 0 33 0 33 2 tCLKP CLK Period 30 30 3 4 tCLKPW CLK Pulse Width 12 12 5 fDCLK DELCLK Frequency 12 40 12 40 6 tDCLKP DELCLK Period 25 83 25 83 7 8 tDCLKPW DELCLK Pulse Width 12 12 9a tPRASCAS0 RAS Asserted to CAS Asserted 30 30 (tRAH e 15 ns tASC e 0 ns) 9b tPRASCAS1 RAS Asserted to CAS Asserted 40 40 (tRAH e 15 ns tASC e 10 ns) 9c tPRASCAS2 (RAS Asserted to CAS Asserted 40 40 (tRAH e 25 ns tASC e 0 ns) 9d tPRASCAS3 (RAS Asserted to CAS Asserted 50 50 (tRAH e 25 ns tASC e 10 ns) 10a tRAH Row Address Hold Time (tRAH e 15) 15 15 10b tRAH Row Address Hold Time (tRAH e 25) 25 25 11a tASC Column Address Setup Time (tASC e 0) 0 0 11b tASC Column Address Setup Time (tASC e 10) 10 10 12 tPCKRAS CLK High to RAS Asserted 18 22 following Precharge 13 tPARQRAS AREQ Negated to RAS Negated 25 29 14 tPENCL ECAS0 – 3 Asserted to CAS Asserted 15 22 15 tPENCH ECAS0 – 3 Negated to CAS Negated 14 21 16 tPARQCAS AREQ Negated to CAS Negated 36 43 17 tPCLKWH CLK to WAIT Negated 25 25 18 tPCLKDL0 CLK to DTACK Asserted (Programmed as DTACK of 12 1 1 23 23 or if WAITIN is Asserted) 19 tPEWL ECAS Negated to WAIT Asserted 29 29 during a Burst Access 20 tSECK ECAS Asserted Setup to CLK High to Recognize the Rising Edge of CLK 13 13 during a Burst Access 40 |
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