STM8S005C6 datasheet(59/97 Pages) STMICROELECTRONICS

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STM8S005C6 STM8S005K6

Electrical characteristics

Figure 18. HSE oscillator circuit diagram

HSE oscillator critical gm formula

Rm: Notional resistance (see crystal specification) 

Lm: Notional inductance (see crystal specification)

Cm: Notional capacitance (see crystal specification)

Co: Shunt capacitance (see crystal specification)



CL1=CL2=C: Grounded external capacitance

gm >> gmcrit

Table 31. HSE oscillator characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSE

External high speed oscillator

frequency

-1

MHz

Feedback resistor

220



C(1)

Recommended load capacitance (2)

IDD(HSE)

HSE oscillator power consumption

C = 20 pF,

fOSC = 16 MHz

6 (startup)

1.6 (stabilized)(3)

C = 10 pF,

fOSC = 16 MHz

6 (startup)

1.2 (stabilized)(3)

Oscillator transconductance

mA/V

tSU(HSE)

(4) Startup time

VDD is stabilized

C is approximately equivalent to 2 x crystal Cload.

The oscillator selection can be optimized in terms of supply current using a high quality resonator with small Rm value.

Refer to crystal manufacturer for more details

Data based on characterization results, not tested in production.

tSU(HSE) is the start-up time measured from the moment it is enabled (by software) to a stabilized 24 MHz oscillation is

reached. This value is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer.

OSCOUT

OSCIN

fHSE to core

CL1

CL2

STM8

Resonator

Consumption

control

Resonator

mcrit





HSE



2 R



2Co



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