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STM8S005C6 数据表(PDF) 62 Page - STMicroelectronics |
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STM8S005C6 数据表(HTML) 62 Page - STMicroelectronics |
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62 / 97 page ![]() Electrical characteristics STM8S005C6 STM8S005K6 62/97 DocID022186 Rev 4 9.3.5 Memory characteristics RAM and hardware registers Flash program memory/data EEPROM memory General conditions: TA = -40 to 85 °C. Table 34. RAM and hardware registers Symbol Parameter Conditions Min Unit VRM Data retention mode(1) 1. Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware registers (only in halt mode). Guaranteed by design, not tested in production. Halt mode (or reset) VIT-max (2) 2. Refer to Table 18 on page 47 for the value of VIT-max. V Table 35. Flash program memory/data EEPROM memory Symbol Parameter Conditions Min(1) 1. Data based on characterization results, not tested in production. Typ Max Unit VDD Operating voltage (all modes, execution/write/erase) fCPU 16 MHz 2.95 - 5.5 V tprog Standard programming time (including erase) for byte/word/block (1 byte/4 bytes/128 bytes) -- 6.0 6.6 ms Fast programming time for 1 block (128 bytes) -- 3.0 3.3 ms terase Erase time for 1 block (128 bytes) - - 3.0 3.3 ms NRW Erase/write cycles(2) (program memory) 2. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase operation addresses a single byte. TA 85 °C 100 - - cycles Erase/write cycles(2) (data memory) 100 k - - tRET Data retention (program memory) after 100 erase/write cycles at TA 85 °C TRET = 55° C 20 - - years Data retention (data memory) after 10 k erase/write cycles at TA 85 °C 20 - - Data retention (data memory) after 100 k erase/write cycles at TA 85 °C TRET = 85° C 1.0 - - IDD Supply current (Flash programming or erasing for 1 to 128 bytes) -- 2.0 - mA |
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