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STM8S005C6 数据表(PDF) 83 Page - STMicroelectronics

部件名 STM8S005C6
功能描述  Extended instruction set
PDF  97 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM8S005C6 数据表(HTML) 83 Page - STMicroelectronics

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STM8S005C6 STM8S005K6
Electrical characteristics
84
Electromagnetic interference (EMI)
Emission tests conform to the SAE IEC 61967-2 standard for test software, board layout
and pin loading.
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to the application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (3 positive then 3 negative pulses separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). This test
conforms to the JESD22-A114A/A115A standard. For more details, refer to the application
note AN1181.
Table 47. EMI data
Symbol
Parameter
Conditions
Unit
General conditions
Monitored
frequency band
Max fHSE/fCPU
(1)
1.
Data based on characterization results, not tested in production.
8 MHz/
8 MHz
8 MHz/
16 MHz
SEMI
Peak level
VDD 5 V 
TA 25 °C
LQFP48 package
conforming to SAE
IEC 61967-2
0.1 MHz to 30 MHz
13
14
dBµV
30 MHz to 130 MHz
23
19
130 MHz to 1 GHz
-4.0
-4.0
SAE EMI
level
-2.0
1.5
Table 48. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class
Maximum
value(1)
1.
Data based on characterization results, not tested in production.
Unit
VESD(HBM)
Electrostatic discharge voltage
(Human body model)
TA 25°C, conforming to
JESD22-A114
A
2000
V
VESD(CDM)
Electrostatic discharge voltage
(Charge device model)
TA 25°C, conforming to
JESD22-C101
IV
1000
V



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