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STA339BWS 数据表(PDF) 14 Page - STMicroelectronics |
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STA339BWS 数据表(HTML) 14 Page - STMicroelectronics |
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14 / 79 page ![]() Electrical specifications STA339BWS 14/79 DocID015276 Rev 8 3.5 Electrical specifications for the power section The specifications given in this section are valid for the operating conditions: VCC = 18 V, f = 1 kHz, fsw = 384 kHz, Tamb = 25 °C and RL = 8 , unless otherwise specified. Table 7. Electrical specifications - power section Symbol Parameter Conditions Min Typ Max Unit Po Output power BTL THD = 1% - 16 - W THD = 10% - 20 - Output power SE THD = 1%,RL= 4 -7 - W THD = 10%,RL= 4 -9 - RdsON Power P-channel or N-channel MOSFET ld = 0.75 A - - 250 m gP Power P-channel RdsON matching ld = 0.75 A - 100 - % gN Power N-channel RdsON matching ld = 0.75 A - 100 - % Idss Power P-channel/N-channel leakage VCC = 20 V - - 1 A tr Rise time Resistive load, see Figure 3 below - - 10 ns tf Fall time - - 10 ns IVCC Supply current from VCC in power down PWRDN = 0 - 0.3 - A Supply current from VCC in operation PWRDN = 1 - 15 - mA IVDD Supply current FFX processing Internal clock = 49.152 MHz - 55 - mA ILIM Overcurrent limit (1) 2.5 3.0 - A ISCP Short -circuit protection RL = 0 3.0 3.6 - A VUVP Undervoltage protection - - - 4.3 V tmin Output minimum pulse width No load 20 40 60 ns DR Dynamic range - - 100 - dB SNR Signal to noise ratio, ternary mode A-Weighted - 100 - dB Signal to noise ratio binary mode - - 90 - dB THD+N Total harmonic distortion + noise FFX stereo mode, Po = 1 W f = 1 kHz - 0.2 - % XTALK Crosstalk FFX stereo mode, <5 kHz One channel driven at 1 W, other channel measured -80 - dB Peak efficiency, FFX mode Po = 2 x 20 W into 8 -90 - % Peak efficiency, binary modes Po = 2 x 9 W into 4 + 1 x 20 W into 8 -87 - 1. Limit the current if overcurrent warning detect adjustment bypass is enabled (register bit CONFC.OCRB on page 31). When disabled refer to the ISCP. |
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