MAS6503 datasheet(19/34 Pages) MAS

19 / 34 page

DA6503.005

14 December 2016

19 (34)

EEPROM WRITE PROCEDURE

Figure 3. Flow chart for MAS6503 EEPROM write

Important note: Before EEPROM programming make sure that in the Test register (E1/61HEX) the ENVIV=0 and

in the Measurement control register 1 (E2/62HEX) the DIV=0 are selected. These select 250 kHz system clock

frequency which is required for the proper EEPROM programming pulses. This condition is guaranteed by

making device reset either using the reset register (E0/60HEX) or the XCLR pin.

Note: In the “VERIFY WRITTEN DATA” step it could be also additionally checked that the EEPROM status

START

INITIAL CONDITIONS

Reset device by XCLR or

by writing any data to the reset register E0/60HEX

POWER UP DEVICE

Connect supply voltage VDD

ENABLE EEPROM WRITE

Write 04HEX to the EEPROM write enable register E6/66HEX

WAIT

Wait minimum 16ms after writing byte (8-bit) to EEPROM

STOP

DISABLE EEPROM WRITE

Write 00HEX to the EEPROM write enable register E6/66HEX

WRITE DATA TO EEPROM

Write data byte (8-bit) to selected EEPROM memory address

Write more data?

yes

VERIFY WRITTEN DATA

Read the written data byte (8-bit) from the EEPROM memory address

MAS6503 数据表(PDF) 19 Page - Micro Analog systems