DA6503.005

14 December 2016

4 (34)

ABSOLUTE MAXIMUM RATINGS

All Voltages with Respect to Ground

Parameter

Symbol

Conditions

Min

Max

Unit

Supply Voltage

-0.3

5.0

V

Voltage Range for All Pins

-0.3

V

Latchup Current Limit

For all pins, test according to

JESD78A.

-100

+100

mA

Junction Temperature

+ 150

°C

Storage Temperature

Note 1

- 55

+125

°C

Note 1: See EEPROM memory data retention at hot temperature. Storage or bake at hot temperatures will reduce the wafer level trimming

and calibration data retention time.

Note: The absolute maximum rating values are stress ratings only. Functional operation of the device at conditions between maximum

operating conditions and absolute maximum ratings is not implied and EEPROM contents may be corrupted. Exposure to these conditions

for extended periods may affect device reliability (e.g. hot carrier degradation, oxide breakdown). Applying conditions above absolute

maximum ratings may be destructive to the devices.

Note: This is a CMOS device and therefore it should be handled carefully to avoid any damage by static voltages (ESD).

RECOMMENDED OPERATION CONDITIONS

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Supply Voltage

Without internal regulator

With internal regulator

1.8

2.7

3.6

3.6

V

Operating Temperature

-40

+25

+85

°C

EEPROM Write

Temperature

Note 1

+10

+25

+40

°C

Note 1: EEPROM write operation is recommended to be done at room temperature

ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Regulator Output

Voltage

-3.5%

-3.5%

-3.5%

-3.5%

1.8

2.2

2.6

2.9

+3.5%

+3.5%

+3.5%

+3.5%

V

Standby current

All inputs at VDD, no load.

Note 1.

0.01

0.1

A

Conversion

Current

Consumption

Pressure mode, Reg OFF

Temperature mode, Reg OFF

VDD monitor mode, Reg OFF

760

600

710

560

760

1200

1000

1100

900

1200

µA

Peak Supply

Current During

Pressure

Measurement

1.39

mA

Peak Supply

Current During

Temperature

Measurement

0.75

mA

Note 1. Leakage current may increase if digital input voltages are not close to VDD (logic level high) or GND (logic level low). Also setting

XCS low activates the EEPROM memory regardless of the XSPI setting and the device consumes 20

A …30A current. To minimize

current consumption XCS should be set low only during time periods when the device is used during SPI communication.