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MMA8652FC 数据表(PDF) 9 Page - NXP Semiconductors |
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MMA8652FC 数据表(HTML) 9 Page - NXP Semiconductors |
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9 / 65 page  MMA8652FC Sensors Freescale Semiconductor, Inc. 9 2.3 Electrical characteristics Table 5. Electrical characteristics at VDD = 2.5 V, VDDIO = 1.8 V, T = 25°C, unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit Supply voltage VDD 1.95 2.5 3.6 V Interface supply voltage VDDIO 1.62 1.8 3.6 V Low Power mode IddLP ODR = 1.563 Hz 6.5 μA ODR = 6.25 Hz 6.5 ODR = 12.5 Hz 6.5 ODR = 50 Hz 15 ODR = 100 Hz 26 ODR = 200 Hz 49 ODR = 400 Hz 94 ODR = 800 Hz 184 Normal mode Idd ODR = 1.563 Hz 27 μA ODR = 6.25 Hz 27 ODR = 12.5 Hz 27 ODR = 50 Hz 27 ODR = 100 Hz 49 ODR = 200 Hz 94 ODR = 400 Hz 184 ODR = 800 Hz 184 Boot-Up current IddBoot VDD = 2.5 V, the current during the Boot sequence is integrated over 0.5 ms, using a recommended bypass cap 1mA Value of capacitor on BYP pin Cap –40°C to 85°C 75 100 470 nF Standby current IddStby 25°C 1.4 5 μA Digital high-level input voltage SCL, SDA VIH VDD = 3.6 V, VDDIO = 3.6 V 0.7*VDDIO V Digital low-level input voltage SCL, SDA VIL VDD = 1.95 V, VDDIO = 1.62 V 0.3*VDDIO V High-level output voltage INT1, INT2 VOH VDD = 3.6 V, VDDIO = 3.6 V, IO = 500 μA 0.9*VDDIO V Low-level output voltage INT1, INT2 VOL VDD = 1.95 V, VDDIO = 1.62 V, IO = 500 μA 0.1*VDDIO V Low-level output voltage SDA VOLS IO = 3 mA 0.4 V Output source current INT1, INT2 Isource Voltage high level VOUT = 0.9 x VDDIO 2mA Output sink current INT1, INT2 Isink Voltage high level VOUT = 0.9 x VDDIO 3mA Power-on ramp time Tpr 0.001 1000 ms Boot time Tbt Time from VDDIO on and VDD > VDD min until I2C is ready for operation, Cbyp = 100 nf 350 500 µs Turn-on time Ton1 Time to obtain valid data from Standby mode to Active mode 2/ODR + 1 ms - Turn-on time Ton2 Time to obtain valid data from valid voltage applied 2/ODR + 2 ms - Operating temperature range TAGOC –40 85 °C |
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