| 数据搜索系统,热门电子元器件搜索 |
|
LTC4373CMS8 数据表(PDF) 3 Page - Analog Devices |
|
|
|||||||||||||||||||||||||||||
LTC4373CMS8 数据表(HTML) 3 Page - Analog Devices |
|
3 / 20 page ![]() LTC4372/LTC4373 3 Rev. 0 For more information www.analog.com ORDER INFORMATION TUBE TAPE AND REEL PART MARKING* PACKAGE DESCRIPTION TEMPERATURE RANGE LTC4372CDD#PBF LTC4372CDD#TRPBF LHGR 8-Lead (3mm × 3mm) Plastic DFN 0°C to 70°C LTC4372IDD#PBF LTC4372IDD#TRPBF LHGR 8-Lead (3mm × 3mm) Plastic DFN –40°C to 85°C LTC4372HDD#PBF LTC4372HDD#TRPBF LHGR 8-Lead (3mm × 3mm) Plastic DFN –40°C to 125°C LTC4372CMS8#PBF LTC4372CMS8#TRPBF LTHGS 8-Lead Plastic MSOP 0°C to 70°C LTC4372IMS8#PBF LTC4372IMS8#TRPBF LTHGS 8-Lead Plastic MSOP –40°C to 85°C LTC4372HMS8#PBF LTC4372HMS8#TRPBF LTHGS 8-Lead Plastic MSOP –40°C to 125°C LTC4373CDD#PBF LTC4373CDD#TRPBF LHMQ 8-Lead (3mm × 3mm) Plastic DFN 0°C to 70°C LTC4373IDD#PBF LTC4373IDD#TRPBF LHMQ 8-Lead (3mm × 3mm) Plastic DFN –40°C to 85°C LTC4373HDD#PBF LTC4373HDD#TRPBF LHMQ 8-Lead (3mm × 3mm) Plastic DFN –40°C to 125°C LTC4373CMS8#PBF LTC4373CMS8#TRPBF LTHMR 8-Lead Plastic MSOP 0°C to 70°C LTC4373IMS8#PBF LTC4373IMS8#TRPBF LTHMR 8-Lead Plastic MSOP –40°C to 85°C LTC4373HMS8#PBF LTC4373HMS8#TRPBF LTHMR 8-Lead Plastic MSOP –40°C to 125°C Contact the factory for parts specified with wider operating temperature ranges. Tape and reel specifications. Some packages are available in 500 unit reels through designated sales channels with #TRMPBF suffix. ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS VIN Input Supply Voltage Range l 2.5 80 V VIN(UVL) Input Supply Undervoltage Lockout IN Rising l 1.9 2.1 2.45 V ∆VIN(HYST) Input Supply Undervoltage Lockout Hysteresis 80 mV VINTVCC Internal Regulator Voltage IINTVCC = 0 to –10µA l 2.5 3.5 4.5 V IQ Total Supply Current IQ = IIN + ISOURCE + IOUT Diode Control: IGATE = –0.1µA Single or Back-to-Back MOSFETs (Note 4) (C-Grade, I-Grade) (H-Grade) l l 5 5 10 20 µA µA Shutdown: SHDN = 2V, UV = 0V Single MOSFET Back-to-Back MOSFETs l l 3.5 0.5 10 2.5 µA µA Reverse Current: ∆VSD = –0.1V, IN = 12V Single MOSFET Back-to-Back MOSFETs l l 20 10 30 20 µA µA IOUT OUT Current IN – OUT = 4V IN – OUT = –4V l l –0.5 1.8 –10 5 µA µA INEG IN + SOURCE Current During Reverse Battery IN = SOURCE = –24V, OUT = 24V l –1 –5 mA IOUT(NEG) OUT Current During Reverse Battery IN = SOURCE = –24V, OUT = 24V l 0.3 0.5 mA ∆VSD(T) Source-Drain Threshold (IN-OUT) Low to High. Activates IGATE(UP) l 20 30 45 mV ∆VGATE(H) Maximum GATE Drive (GATE-SOURCE) IN ≤ 5V, ∆VSD = 0.1V, IGATE = 0, –1µA IN > 5V, ∆VSD = 0.1V, IGATE = 0, –1µA l l 4.5 10 6.5 11.7 10 16 V V IGATE(UP) GATE Pull-Up Current GATE = IN, ∆VSD = 0.1V l –15 –20 –25 µA The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. IN = SOURCE =12V, SHDN = 0V, UV = 2V unless otherwise noted. |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |