SPC58EEX datasheet(90/154 Pages) STMICROELECTRONICS

90 / 154 page

Electrical characteristics

SPC58EEx, SPC58NEx

90/154

DS11644 Rev 4

terfm

Erase rate Factory Mode(8)

4.0

5.2

5.8

—

C s/MB

tffprogram

Full flash programming

time(9)

12.0

17.8

22.0

15.4

—

tfferase

Full flash erasing time(9)

25.0

40.0

50.0

40.0

—

tESRT

Erase suspend request

rate(10)

200

—

— µs

tPSRT

Program suspend request

rate(10)

—

— µs

tAMRT

Array Integrity Check -

Margin Read suspend

request rate

—

— µs

tPSUS

Program suspend latency(11)

——

—

µs

tESUS

Erase suspend latency(11)

——

—

µs

tAIC0S

Array Integrity Check (6.0

MB, sequential)(12)

—

— ms

tAIC256KS

Array Integrity Check (256

KB, sequential)(12)

1.5

—

— ms

tAIC0P

Array Integrity Check (6.0

MB, proprietary)(12)

4.0

—

tMR0S

Margin Read (6.0 MB,

sequential)(12)

120

—

— ms

tMR256KS

Margin Read (256 KB,

sequential)(12)

4.0

—

— ms

1. Characteristics are valid both for Data Flash and Code Flash, unless specified in the characteristics column.

2. Actual hardware operation times; this does not include software overhead.

3. Typical program and erase times assume nominal supply values and operation at 25 °C.

4. Typical End of Life program and erase times represent the median performance and assume nominal supply values.

Typical End of Life program and erase values may be used for throughput calculations. These values are characteristic, but

not tested.

5. Lifetime maximum program & erase times apply across the voltages and temperatures and occur after the specified

number of program/erase cycles. These maximum values are characterized but not tested or guaranteed.

6. Initial factory condition: < 100 program/erase cycles, 25 °C typical junction temperature and nominal (± 5%) supply

voltages.

7. Initial maximum “All temp” program and erase times provide guidance for time-out limits used in the factory and apply for

less than or equal to 100 program or erase cycles, –40 °C < TJ < 150 °C junction temperature and nominal (± 5%) supply

voltages.

8. Rate computed based on 256 KB sectors.

9. Only code sectors, not including EEPROM.

10. Time between suspend resume and next suspend. Value stated actually represents Min value specification.

Table 47. Flash memory program and erase specifications

Symbol

Characteristics(1)(2)

Value

Unit

Typ(3) C

Initial max

Typical

end of

life(4)

Lifetime

max(5)

25 °C

(6)

All

temp

(7)

< 1 K

cycles

< 250 K

cycles

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