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SPC58EEX 数据表(PDF) 30 Page - STMicroelectronics |
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SPC58EEX 数据表(HTML) 30 Page - STMicroelectronics |
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30 / 154 page ![]() Electrical characteristics SPC58EEx, SPC58NEx 30/154 DS11646 Rev 4 Note: When the device enters into standby mode, the LP pads have the input buffer switched-on. As a consequence, if the pad input voltage VIN is VSS<VIN<VDD_HV, an additional consumption can be measured in the VDD_HV domain. The highest consumption can be seen around mid-range (VIN ~=VDD_HV/2), 2-3mA depending on process, voltage and temperature. This situation may occur if the PAD is used as a ADC input channel, and VSS<VIN<VDD_HV. The applications should ensure that LP pads are always set to VDD_HV or VSS, to avoid the extra consumption. Please refer to the device pinout IO definition excel file to identify the low-power pads which also have an ADC function. 3.8.2 I/O output DC characteristics Figure 4 provides description of output DC electrical characteristics. 4. In the range from WFI (max) to WNFI (min), pulses can be filtered or not filtered, according to operating temperature and voltage. Refer to the device pinout IO definition excel file for the list of pins supporting the wakeup filter feature. Table 12. I/O pull-up/pull-down electrical characteristics Symbol C Parameter Conditions Value Unit Min Typ Max IWPU CC T Weak pull-up current absolute value VIN = 1.1 V(1) —— 130 μA P VIN = 0.69 * VDD_HV_IO(2) 15 — — RWPU CC D Weak Pull-up resistance VDD_HV_IO = 5.0 V ± 10% 33 — 93 K Ω IWPD CC T Weak pull- down current absolute value VIN = 0.69 * VDD_HV_IO(1) —— 130 μA P VIN = 0.9 V(2) 15 — — RWPD CC D Weak Pull- down resistance VDD_HV_IO = 5.0 V ± 10% 29 — 60 K Ω 1. Maximum current when forcing a change in the pin level opposite to the pull configuration. 2. Minimum current when keeping the same pin level state than the pull configuration. |
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