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SPC58EEX 数据表(PDF) 29 Page - STMicroelectronics |
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SPC58EEX 数据表(HTML) 29 Page - STMicroelectronics |
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29 / 154 page  DS11646 Rev 4 29/154 SPC58EEx, SPC58NEx Electrical characteristics 38 Vihcmos BD SR T Input high level CMOS Buddy Device, hysteresis on 0.65 * VDD_HV_IO — VDD_HV_IO + 0.3 V Buddy Device, hysteresis off 0.60 * VDD_HV_IO — VDD_HV_IO + 0.3 V Vilcmos SR P Input low level CMOS — –0.3 — 0.35 * VDD V Vhyscmos CC C Input hysteresis CMOS —0.10 * VDD —— V COMMON ILKG CC P Pad input leakage INPUT-ONLY pads TJ =150 °C —— 200 nA ILKG CC C Pad input leakage INPUT-ONLY pads TJ =165 °C —— 270 nA ILKG CC P Pad input leakage MEDIUM pads TJ =150 °C —— 360 nA ILKG CC C Pad input leakage MEDIUM pads TJ =165 °C —— 500 nA ILKG CC P Pad input leakage STRONG pads TJ =150 °C — — 1,000 nA ILKG CC C Pad input leakage STRONG pads TJ =165 °C — — 1,500 nA ILKG CC P Pad input leakage VERY STRONG pads, TJ =150 °C — — 1,000 nA ILKG CC C Pad input leakage VERY STRONG pads, TJ =165 °C — — 2,000 nA CP1 CC D Pad capacitance —— — 10 pF Vdrift CC D Input Vil/Vih temperature drift In a 1 ms period, with a temperature variation <30 °C —— 100 mV WFI SR C Wakeup input filtered pulse(4) —— — 20 ns WNFI SR C Wakeup input not filtered pulse(4) — 400 — — ns 1. Good approximation of the variation of the minimum value with supply is given by formula: 5 V range: VIHAUT =0.69×VDD_HV_IO; 3.3 V range: VIHAUT =0.75 × VDD_HV_IO 2. Good approximation of the variation of the maximum value with supply is given by formula: 5 V range: VILAUT =0.49×VDD_HV_IO; 3.3 V range: VILAUT =0.35×VDD_HV_IO 3. Good approximation of the variation of the minimum value with supply is given by formula: 5 V and 3.3 V range: VHYSAUT =0.11×VDD_HV_IO Table 11. I/O input electrical characteristics (continued) Symbol C Parameter Conditions Value Unit Min Typ Max |
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