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SPC58EEX 数据表(PDF) 25 Page - STMicroelectronics |
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SPC58EEX 数据表(HTML) 25 Page - STMicroelectronics |
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25 / 154 page ![]() DS11646 Rev 4 25/154 SPC58EEx, SPC58NEx Electrical characteristics 26 3.7 Device consumption Table 9. Device consumption Symbol C Parameter Conditions Value(1) Unit Min Typ Max IDD_LKG(2),(3) CC C Leakage current on the VDD_LV supply TJ =40°C — — 40 mA DTJ = 120 °C — — 180 PTJ = 150 °C — — 320 DTJ = 165 °C — — 500 IDD_LV(3) CC P Dynamic current on the VDD_LV supply, very high consumption profile(4) — — — 489 mA IDD_HV CC P Total current on the VDD_HV supply(4) fMAX —— 97 mA IDD_MAIN_CORE_AC CC T Main Core dynamic current(5) fMAX —— 50 mA IDD_CHKR_CORE_AC CC T Checker Core dynamic operating current fMAX —— 30 mA IDD_HSM_AC CC T HSM platform dynamic operating current(6) fMAX/2 — — 20 mA IDD_AMU_AC CC T AMU dynamic operating current(7) fMAX —— 20 mA IDDHALT(8) CC T Dynamic current on the VDD_LV supply +Total current on the VDD_HV supply — — 110 180 mA IDDSTOP(9) CC T Dynamic current on the VDD_LV supply +Total current on the VDD_HV supply — — 21 40 mA IDD_LV_BD CC P Buddy Device Consumption on VDD_LV supply(10) TJ = 150 °C — — 500 mA DTJ = 165 °C — — 600 IDD_HV_BD CC T Buddy Device Consumption on VDD_HV supply(10) — — — 130 mA ISPIKE CC T Maximum short term current spike(11) < 20 µs observation window — — 100 mA dI SR D Current difference ratio to average current (dI/avg(I))(12) 20 µs observation window —— 20 % |
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