STM32F103CBU6TR datasheet(59/116 Pages) STMICROELECTRONICS

59 / 116 page

DS5319 Rev 18

59/116

STM32F103x8, STM32F103xB

Electrical characteristics

115

5.3.11

Absolute maximum ratings (electrical sensitivity)

Based on three different tests (ESD, LU) using specific measurement methods, the device is

stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts × (n + 1) supply pins). This test

conforms to the JESD22-A114/C101 standard.

Static latch-up

Two complementary static tests are required on six parts to assess the latch-up

performance:



A supply overvoltage is applied to each power supply pin



A current injection is applied to each input, output and configurable I/O pin

These tests are compliant with EIA/JESD 78A IC latch-up standard.

Table 32. ESD absolute maximum ratings

Symbol

Ratings

Conditions

Class Maximum value(1) Unit

VESD(HBM)

Electrostatic discharge

voltage (human body model)

TA +25 °C

conforming to

JESD22-A114

22000

VESD(CDM)

Electrostatic discharge

voltage (charge device

model)

TA +25 °C

conforming to

ANSI/ESD STM5.3.1

500

1. Guaranteed based on test during characterization

Table 33. Electrical sensitivities

Symbol

Parameter

Conditions

Class

Static latch-up class

TA +105 °C conforming to JESD78A

II level A

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