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STM32F103CBU6TR 数据表(PDF) 38 Page - STMicroelectronics |
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STM32F103CBU6TR 数据表(HTML) 38 Page - STMicroelectronics |
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38 / 116 page ![]() Electrical characteristics STM32F103x8, STM32F103xB 38/116 DS5319 Rev 18 5.3 Operating conditions 5.3.1 General operating conditions Table 9. General operating conditions Symbol Parameter Conditions Min Max Unit fHCLK Internal AHB clock frequency - 0 72 MHz fPCLK1 Internal APB1 clock frequency - 0 36 fPCLK2 Internal APB2 clock frequency - 0 72 VDD Standard operating voltage - 2 3.6 V VDDA(1) 1. When the ADC is used, refer to Table 46. Analog operating voltage (ADC not used) Must be the same potential as VDD(2) 2. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV between VDD and VDDA can be tolerated during power-up and operation. 23.6 Analog operating voltage (ADC used) 2.4 3.6 VBAT Backup operating voltage - 1.8 3.6 VIN I/O input voltage Standard IO –0.3 VDD+ 0.3 V FT IO(3) 3. To sustain a voltage higher than VDD + 0.3 V, the internal pull-up/pull-down resistors must be disabled. 2 V < VDD 3.6 V –0.3 5.5 VDD = 2 V –0.3 5.2 BOOT0 0 5.5 PD Power dissipation at TA = 85 °C for suffix 6 or TA = 105 °C for suffix 7(4) 4. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Section 6.9). LFBGA100 - 454 mW LQFP100 - 434 UFBGA100 - 339 TFBGA64 - 308 LQFP64 - 444 LQFP48 - 363 UFQFPN48 - 624 VFQFPN36 - 1000 TA Ambient temperature for 6 suffix version Maximum power dissipation –40 85 °C Low-power dissipation(5) 5. In low-power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see Section 6.9). –40 105 Ambient temperature for 7 suffix version Maximum power dissipation –40 105 Low-power dissipation(5) –40 125 TJ Junction temperature range 6 suffix version –40 105 7 suffix version –40 125 |
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