STM32F103CBU6TR datasheet(39/116 Pages) STMICROELECTRONICS

39 / 116 page

DS5319 Rev 18

39/116

STM32F103x8, STM32F103xB

Electrical characteristics

115

5.3.2

Operating conditions at power-up / power-down

Subject to general operating conditions for TA.

5.3.3

Embedded reset and power control block characteristics

The parameters given in Table 11 are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 9.

Table 10. Operating conditions at power-up / power-down

Symbol

Parameter

Conditions

Min

Max

Unit

tVDD

VDD rise time rate



µs/V

VDD fall time rate



Table 11. Embedded reset and power control block characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VPVD

Programmable voltage

detector level selection

PLS[2:0] = 000 (rising edge)

2.10

2.18

2.26

PLS[2:0] = 000 (falling edge)

2,00

2.08

2.16

PLS[2:0] = 001 (rising edge)

2.19

2.28

2.37

PLS[2:0] = 001 (falling edge)

2.09

2.18

2.27

PLS[2:0] = 010 (rising edge)

2.28

2.38

2.48

PLS[2:0] = 010 (falling edge)

2.18

2.28

2.38

PLS[2:0] = 011 (rising edge)

2.38

2.48

2.58

PLS[2:0] = 011 (falling edge)

2.28

2.38

2.48

PLS[2:0] = 100 (rising edge)

2.47

2.58

2.69

PLS[2:0] = 100 (falling edge)

2.37

2.48

2.59

PLS[2:0] = 101 (rising edge)

2.57

2.68

2.79

PLS[2:0] = 101 (falling edge)

2.47

2.58

2.69

PLS[2:0] = 110 (rising edge)

2.66

2.78

2.90

PLS[2:0] = 110 (falling edge)

2.56

2.68

2.80

PLS[2:0] = 111 (rising edge)

2.76

2.88

3.00

PLS[2:0] = 111 (falling edge)

2.66

2.78

2.90

VPVDhyst(2)

PVD hysteresis

100

VPOR/PDR

Power on/power down

reset threshold

Falling edge

1.8(1)

1. The product behavior is specified by design down to the minimum VPOR/PDR value.

1.88

1.96

Rising edge

1.84

1.92

2.0

VPDRhyst(2)

PDR hysteresis

TRSTTEMPO(2)

2. Specified by design, not tested in production.

Reset temporization

1.0

2.5

4.5

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