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STM32F103CBU6TR 数据表(PDF) 76 Page - STMicroelectronics |
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STM32F103CBU6TR 数据表(HTML) 76 Page - STMicroelectronics |
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76 / 116 page ![]() Electrical characteristics STM32F103x8, STM32F103xB 76/116 DS5319 Rev 18 Figure 37. ADC accuracy characteristics Table 49. ADC accuracy(1) (2) (3) 1. ADC DC accuracy values are measured after internal calibration. 2. Better performance can be achieved in restricted VDD, frequency and temperature ranges. 3. Injecting a negative current on any analog input pins should be avoided as this significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a Schottky diode (pin to ground) to standard analog pins which may potentially inject negative current. Any positive injection current within the limits specified for IINJ(PIN) and IINJ(PIN) in Section 5.3.12 does not affect the ADC accuracy. Symbol Parameter Test conditions Typ Max(4) 4. Evaluated by characterization, not tested in production, unless otherwise specified. Unit ET Total unadjusted error fPCLK2 = 56 MHz, fADC = 14 MHz, RAIN < 10 kΩ, VDDA = 2.4 V to 3.6 V Measurements made after ADC calibration ±2 ±5 LSB EO Offset error ±1.5 ±2.5 EG Gain error ±1.5 ±3 ED Differential linearity error ±1 ±2 EL Integral linearity error ±1.5 ±3 MSv19880V6 (1) Example of an actual transfer curve (2) Ideal transfer curve (3) End-point correlation line n = ADC resolution ET = total unadjusted error: maximum deviation between the actual and ideal transfer curves EO = offset error: maximum deviation between the first actual transition and the first ideal one EG = gain error: deviation between the last ideal transition and the last actual one ED = differential linearity error: maximum deviation between actual steps and the ideal one EL = integral linearity error: maximum deviation between any actual transition and the end point correlation line 2 n-1 7 6 5 4 3 2 1 0 Output code EO VSSA 2 n-2 2 n-3 VREF+ (VDDA) ET EL ED 1 LSB ideal EG (1) (2) (3) (or )] [1LSB = VDDA 2 n VREF+ 2 n |
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