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STM32U545NET3QTR 数据表(PDF) 194 Page - STMicroelectronics |
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STM32U545NET3QTR 数据表(HTML) 194 Page - STMicroelectronics |
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194 / 283 page ![]() Electrical characteristics STM32U545xx 194/283 DS14216 Rev 1 5.3.8 Internal clock timing characteristics The parameters given in the table below are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 33. The provided curves are characterization results, not tested in production. High-speed internal (HSI16) RC oscillator Table 81. HSI16 oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fHSI16 HSI16 frequency after factory calibration VDD = 3.0 V, TJ = 30 °C 15.92 16 16.08 MHz fHSI16(1) TJ = –10 °C to 100 °C, 1.58 ≤ VDD ≤ 3.6 V 15.84 - 16.16 TJ = –40 °C to 130 °C, 1.58 ≤ VDD ≤ 3.6 V 15.65 - 16.25 TRIM(2) HSI16 user trimming step - 18 29 40 kHz DuCy(HSI16)(2) Duty cycle - 45 - 55 % tsu(HSI16)(2) HSI16 oscillator startup time - - 2.5 3.6 μs tstab(HSI16)(2) HSI16 oscillator stabilization time At 1% of target frequency - 4 6 IDD(HSI16)(2) HSI16 oscillator power consumption - - 150 210 μA 1. Evaluated by characterization. Not tested in production. It does not take into account package and soldering effects. 2. Specified by design. Not tested in production. |
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