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STM32U545NET3QTR 数据表(PDF) 202 Page - STMicroelectronics

部件名 STM32U545NET3QTR
功能描述  Ultra-low-power Arm® Cortex®-M33 MCUTrustZone®FPU,240 DMIPS, 512 KB flash memory, 274 KB SRAM, crypto
PDF  283 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32U545NET3QTR 数据表(HTML) 202 Page - STMicroelectronics

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Electrical characteristics
STM32U545xx
202/283
DS14216 Rev 1
5.3.10
Flash memory characteristics
Table 87. Flash memory characteristics(1)
Symbol
Parameter
Conditions
Typ
Max(2)
Unit
tprog
128-bit programming time
Normal mode
118
118
µs
Burst mode
48
48
tprog_page One 8-Kbyte page programming time
fAHB = 160 MHz, normal mode
60.2
-
ms
fAHB = 160 MHz, burst mode
24.5
-
tprog_bank One 1-Mbyte bank programming time
fAHB = 160 MHz, normal mode
7710
-
fAHB = 160 MHz, burst mode
3140
-
tERASE One 8-Kbyte page erase time
10 k endurance cycles
1.5
2.4
100 k endurance cycles
1.7
3.4
tME
Mass erase time (one bank)
10 k endurance cycles
49
77
Mass erase time (two banks)
98
154
IDD(3)
Average consumption from VDD
Write mode
2.1
-
mA
Erase mode
1.3
-
Maximum current (peak)
Write mode
2.6
-
Erase mode
3.0
-
1. Specified by design. Not tested in production.
2. Evaluated by characterization after cycling. Not tested in production.
3. Evaluated by characterization. Not tested in production.
Table 88. Flash memory endurance and data retention
Symbol
Parameter
Conditions
Min(1)
Unit
NEND Endurance
Whole bank
TA = –40 to 125 °C
100
kcycles
tRET
Data retention
TA = 85 °C after 1 kcycle(2)
30
Years
TA = 105 °C after 1 kcycle(2)
15
TA = 125 °C after 1 kcycle(2)
10
TA = 55 °C after 10 kcycles(2)
30
TA = 85 °C after 10 kcycles(2)
15
TA = 105 °C after 10 kcycles(2)
10
TA = 55 °C after 100 kcycles(2)
30
TA = 85 °C after 100 kcycles(2)
15
TA = 105 °C after 100 kcycles(2)
10
1. Evaluated by characterization. Not tested in production.
2. Cycling performed over the whole temperature range.



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