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STM32U545NET3QTR 数据表(PDF) 239 Page - STMicroelectronics

部件名 STM32U545NET3QTR
功能描述  Ultra-low-power Arm® Cortex®-M33 MCUTrustZone®FPU,240 DMIPS, 512 KB flash memory, 274 KB SRAM, crypto
PDF  283 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32U545NET3QTR 数据表(HTML) 239 Page - STMicroelectronics

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DS14216 Rev 1
239/283
STM32U545xx
Electrical characteristics
258
PGA gain(3)
Non-inverting gain value
PGA_GAIN[1:0] = 00
-
2
-
-
PGA_GAIN[1:0] = 01
-
4
-
PGA_GAIN[1:0] = 10
-
8
-
PGA_GAIN[1:0] = 11
-
16
-
Rnetwork
R2/R1 internal resistance
values in non-inverting
PGA mode(5)
PGA gain = 2
-
80/80
-
kΩ/
kΩ
PGA gain = 4
-
120/40
-
PGA gain = 8
-
140/20
-
PGA gain = 16
-
150/10
-
Delta R
Resistance variation
(R1 or R2)
--18
-
18
%
PGA gain error
PGA gain error
-
-1
-
1
PGA BW
PGA bandwidth for
different non inverting gain
PGA gain = 2
-
GBW/2
-
MHz
PGA gain = 4
-
GBW/4
-
PGA gain = 8
-
GBW/8
-
PGA gain = 16
-
GBW/16
-
en
Voltage noise density
Normal
mode
At 1 kHz,
output loaded with
3.9 kΩ
-220
-
nV
/√Hz
Low-power
mode
At 1 kHz,
output loaded with
20 kΩ
-350
-
Normal
mode
At 10 kHz, output
loaded with 3.9 kΩ
-190
-
Low-power
mode
at 10 kHz, output
loaded with 20 kΩ
-210
-
IDDA(OPAMP)
OPAMP consumption from
VDDA
Normal
mode
no load, quiescent
mode,
standard speed
-
130
190
µA
Low-power
mode
-40
58
Normal
mode
no load, quiescent
mode,
high-speed mode
-
138
205
Low-power
mode
-42
60
1. Specified by design and not tested in production, unless otherwise specified.
2. OPA_RANGE must be set to 1 in OPAMP1_CSR.
3. Evaluated by characterization. Not tested in production.
4. Mostly I/O leakage when used in analog mode. Refer to Ilkg parameter in Table 93: I/O static characteristics.
5. R2 is the internal resistance between the OPAMP output and the OPAMP inverting input. R1 is the internal resistance
between the OPAMP inverting input and ground. PGA gain = 1 + R2/R1.
Table 117. OPAMP characteristics(1)(2) (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit



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