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BLUENRG-332VC 数据表(PDF) 45 Page - STMicroelectronics

部件名 BLUENRG-332VC
功能描述  Programmable Bluetooth® Low Energy wireless SoC
PDF  67 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

BLUENRG-332VC 数据表(HTML) 45 Page - STMicroelectronics

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6.3.11
High speed ring oscillator characteristics
Table 29. HSI oscillator characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
fNOM
Nominal frequency
-
-
64
-
MHz
6.3.12
Low speed ring oscillator characteristics
Table 30. LSI oscillator characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
fNOM
Nominal frequency
-
-
33
-
kHz
ΔFRO_ΔT/FRO
Frequency spread vs. temperature
Standard deviation
-
140
-
ppm/ºC
6.3.13
PLL characteristics
Characteristics measured over recommended operating conditions unless otherwise specified.
Table 31. PLL characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
PNSYNTH
RF carrier phase noise
At ±1 MHz offset from carrier
(measured at 2.4 GHz)
-
-110
-
dBc/Hz
At 2.4 GHz ±3 MHz offset from carrier
(measured at 2.4 GHz)
-
-114
-
dBc/Hz
At 2.4 GHz±6 MHz offset from carrier
(measured at 2.4 GHz)
-
-128
-
dBc/Hz
At ±25 MHz offset from carrier
-
-135
-
dBc/Hz
LOCKTIMETX
PLL lock time to TX
With calibration @2.5 ppm
-
150
-
µs
LOCKTIMERX
PLL lock time to RX
With calibration @2.5 ppm
-
110
-
µs
LOCKTIMERXTX
PLL lock time RX to TX
Without calibration @2.5 ppm
-
47
-
µs
LOCKTIMETXRX
PLL lock time TX to RX
Without calibration @2.5 ppm
-
32
-
µs
6.3.14
Flash memory characteristics
The characteristics below are guaranteed by design.
Table 32. Flash memory characteristics
Symbol
Parameter
Test conditions
Typ.
Max.
Unit
tprog
32-bit programming time
-
20
40
µs
tprog_burst
4x32-bit burst programming time
-
4x20
4x40
tERASE
Page (2 kbyte) erase time
-
20
40
ms
tME
Mass erase time
-
20
40
IDD
Average consumption from VDD
Write mode
3
-
mA
Erase mode
3
-
Mass erase
5
-
BlueNRG-LPS
Operating conditions
DS13819 - Rev 4
page 45/67



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