3.2

Recommended operating conditions

Table 3. Recommended operating conditions (Each voltage referred to GND unless otherwise specified)

Symbol

Parameter

Note

Min

Max

Unit

VS

High voltage bus

0

520

V

VCC

Supply voltage

4.75

9.5

V

PVCC-PGND

PVCC to PGND low side supply(1)

4.75

6.5

V

Best performance

5

6.5

V

PVCC

Low-side driver supply

3

8.5

V

VCC-PVCC

VCC to PVCC pin voltage

-3

3

V

PGND

Low-side driver ground(1)

-2

2

V

DT

Suggested minimum deadtime

5

ns

TIN_MIN

Minimum duration of input pulse to obtain undistorted

output pulse

120

ns

VBO

BOOT to OUTb pin voltage(2)

4.4

6.5

V

Best performance

5

6.5

V

BOOT

BOOT to GND voltage

0(3)

530

V

Vi

Logic inputs voltage range

0

20

V

TJ

Junction temperature

-40

125

°C

1. PGND internally connected to SENSE.

2. OUTb internally connected to OUT.

3. 5 V is recommended during high-hide turn-on.

3.3

Thermal data

Table 4. Thermal data

Symbol

Parameter

Value

Unit

Rth(J-CB)

Thermal resistance junction to each GaN transistor exposed pad, typical

1.9

°C/W

Rth(J-A)

Thermal resistance junction-to-ambient(1)

17.5

°C/W

1. The junction to ambient thermal resistance is obtained simulating the device mounted on a 2s2p (4 layer) FR4 board as

JESD51-5,7 with 6 thermal vias for each exposed pad. Power dissipation uniformly distributed over the two GaN transistors.

MASTERGAN1

Recommended operating conditions

DS13417 - Rev 3

page 6/27