Symbol

Parameter

Test condition

Min

Typ

Max

Unit

VCC – BOOT = 0.5 V

RONH

High side turn on resistor

I(GH) = 1 mA (source)

50

Ω

ROFFH

High side turn off resistor

I(GH) = 1 mA (sink)

2

Ω

Logic inputs

Vil

LIN, HIN, SD/OD

Low level logic threshold voltage

TJ = 25°C

1.1

1.31

1.45

V

Full Temperature range(4)

0.8

Vih

High level logic threshold

voltage

TJ = 25°C

2

2.17

2.5

V

Full Temperature range(4)

2.7

Vihys

Logic input threshold hysteresis

0.7

0.96

1.2

V

IINh

LIN, HIN

Logic ‘1’ input bias current

LIN, HIN = 5 V

23

33

55

μA

IINl

Logic ‘0’ input bias current

LIN, HIN = GND

1

μA

RPD_IN

Input pull-down resistor

LIN, HIN = 5 V

90

150

220

kΩ

ISDh

SD/OD

Logic “1” input bias current

SD/OD = 5 V

11

15

20

μA

ISDl

SD/OD

Logic “0” input bias current

SD/OD = 0 V

1

μA

RPD_SD

SD/OD

Pull-down resistor

SD/OD = 5 V

OpenDrain OFF

250

330

450

kΩ

VTSD

SD/OD

Thermal shutdown unlatch

threshold

TJ = 25°C(5)

0.5

0.75

1

V

RON_OD

SD/OD

Open drain ON resistance

TJ = 25°C;

IOD = 400 mV(5)

8

10

18

Ω

IOL_OD

SD/OD

Open Drain low level sink

current

TJ = 25°C;

VOD = 400 mV(5)

22

40

50

mA

Over temperature protection

TTSD

Shutdown temperature

(4)

175

°C

THYS

Temperature hysteresis

(4)

20

°C

1. VCC UVLO is referred to VCC - GND.

2. VBO = VBOOT - VOUT.

3. RBD(on) is tested in the following way:

RBD(on) = [(VCC - VBOOTa) - (VCC - VBOOTb)] / [Ia - Ib]

Where: Ia is BOOT pin current when VBOOT = VBOOTa; Ib is BOOT pin current when VBOOT = VBOOTb

4. Range estimated by characterization, not tested in production.

5. Tested on wafer.

4.2

GaN power transistor

Table 6. GaN power transistor electrical characteristics (VGS = 6 V; TJ = 25°C, unless otherwise specified. )

Symbol

Parameter

Test condition

Min

Typ

Max

Unit

GaN on/off states

V(BR)DS

Drain-source breakdown voltage

IDSS < 18 µA(1)

VGS = 0 V

650

V

MASTERGAN1

GaN power transistor

DS13417 - Rev 3

page 8/27