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MASTERGAN1 数据表(PDF) 25 Page - STMicroelectronics

部件名 MASTERGAN1
功能描述  High power density 600V Half bridge driver with two enhancement mode GaN HEMT
PDF  27 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

MASTERGAN1 数据表(HTML) 25 Page - STMicroelectronics

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List of tables
Table 1.
Pin description...................................................................... 3
Table 2.
Absolute maximum ratings (each voltage referred to GND unless otherwise specified) .................... 5
Table 3.
Recommended operating conditions (Each voltage referred to GND unless otherwise specified) ............. 6
Table 4.
Thermal data....................................................................... 6
Table 5.
Driver electrical characteristics : VCC = PVCC = 6 V; SENSE = GND; TJ = 25°C, unless otherwise specified (Each
voltage referred to GND unless otherwise specified.) ........................................... 7
Table 6.
GaN power transistor electrical characteristics (VGS = 6 V; TJ = 25°C, unless otherwise specified. ) ......... 8
Table 7.
GaN power transistor characterization values ............................................... 10
Table 8.
Inductive load switching characteristics.................................................... 10
Table 9.
Inputs truth table (applicable when device is not in UVLO)....................................... 15
Table 10.
QFN 9 x 9 x 1 mm package dimensions ................................................... 19
Table 11.
Order codes ...................................................................... 22
Table 12.
Document revision history ............................................................. 23
MASTERGAN1
List of tables
DS13417 - Rev 3
page 25/27



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