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MASTERGAN1 数据表(PDF) 16 Page - STMicroelectronics

部件名 MASTERGAN1
功能描述  High power density 600V Half bridge driver with two enhancement mode GaN HEMT
PDF  27 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

MASTERGAN1 数据表(HTML) 16 Page - STMicroelectronics

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The MASTERGAN1 VCC supply voltage is continuously monitored by an under-voltage lockout (UVLO) circuitry
that turns both the high-side and low-side GaN transistors off when the supply voltage goes below the VCC_thOFF
threshold. The UVLO circuitry turns on the GaN, according to LIN and HIN status, as soon as the supply voltage
goes above the VCCthON voltage. A VCChys hysteresis is provided for noise rejection purpose.
Figure 16. VCC UVLO and Low Side
VCC = PVCC
VCCthON
VCCthOFF
UVLO VCC
0V
0V
VCC rise
LIN
GL-PGND
0V
PVCC
6.4
VBO UVLO protection
Dedicated undervoltage protection is available on the bootstrap section between BOOT and OUTb supply pins. In
order to avoid intermittent operation, a hysteresis sets the turn-off threshold with respect to the turn-on threshold.
When VBO voltage goes below VBOthOFF threshold the high-side GaN transistor is switched off. When VBO voltage
reaches VBOthON threshold the device returns to normal operation and the output remains off until the detection of
the HIN pin's rising edge, that activates the high side transistor's turn-on.
Figure 17. VBO UVLO and High Side
VCC
VCCthON
VCCthOFF
HIN
UVLO VBO
0V
0V
VBO rise
(GH-OUTB)
VBO
0V
VBOthON
VBOthOFF
0V
VBO
MASTERGAN1
VBO UVLO protection
DS13417 - Rev 3
page 16/27



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