Features

•

600 V system-in-package integrating half-bridge gate driver and high-voltage

power GaN transistors:

–

QFN 9 x 9 x 1 mm package

–

RDS(ON) = 150 mΩ

–

IDS(MAX) = 10 A

•

Reverse current capability

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Zero reverse recovery loss

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UVLO protection on low-side and high-side

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Internal bootstrap diode

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Interlocking function

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Dedicated pin for shutdown functionality

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Accurate internal timing match

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3.3 V to 15 V compatible inputs with hysteresis and pull-down

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Overtemperature protection

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Bill of material reduction

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Very compact and simplified layout

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Flexible, easy and fast design.

Application

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Switch-mode power supplies

•

Chargers and adapters

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High-voltage PFC, DC-DC and DC-AC Converters

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UPS Systems

•

Solar Power

Description

The MASTERGAN1 is an advanced power system-in-package integrating a gate

driver and two enhancement mode GaN transistors in half

‑bridge configuration.

The integrated power GaNs have RDS(ON) of 150 mΩ and 650 V drain

‑source

breakdown voltage, while the high side of the embedded gate driver can be easily

supplied by the integrated bootstrap diode.

The MASTERGAN1 features UVLO protection on both the lower and upper driving

sections, preventing the power switches from operating in low efficiency or

dangerous conditions, and the interlocking function avoids cross-conduction

conditions.

The input pins extended range allows easy interfacing with microcontrollers, DSP

units or Hall effect sensors.

The MASTERGAN1 operates in the industrial temperature range, -40°C to 125°C.

The device is available in a compact 9x9 mm QFN package.

Product status link

MASTERGAN1

Product label

High power density 600V Half bridge driver with two enhancement mode GaN

HEMT

MASTERGAN1

Datasheet

DS13417 - Rev 3 - October 2020

For further information contact your local STMicroelectronics sales office.

www.st.com