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MASTERGAN1 数据表(PDF) 13 Page - STMicroelectronics |
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MASTERGAN1 数据表(HTML) 13 Page - STMicroelectronics |
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13 / 27 page ![]() Figure 10. Typ ISD vs. VSD, at TJ=25°C VSD (V) VGS=6V TJ=25°C VGS=0V 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 50 Figure 11. Typ ISD vs. VSD, at TJ=125°C TJ=125°C VSD (V) 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 16 18 20 22 24 VGS=6V VGS=0V Figure 12. Safe Operating Area at TJ=25°C Figure 13. Derating curve 0 25 50 75 100 125 TCaseBottom (°C) 0 150 10 20 30 40 50 60 70 Device mounted on a 2s2p (4 layer) FR4 board as JESD51-5,7 with 6 thermal vias for each exposed pad. Power dissipation uniformly distributed over the two GaN transistors. MASTERGAN1 Device characterization values DS13417 - Rev 3 page 13/27 |
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