5

Device characterization values

The information in Table 7 and Table 8 represents typical values based on characterization and simulation results

and are not subject to the production test.

Table 7. GaN power transistor characterization values

Symbol

Parameter

Test condition

Min

Typ

Max

Unit

QG

Total gate charge

VGS = 6 V,

TJ = 25°C

VDS = 0 to 400 V

2

nC

QOSS

Output charge

VGS = 0 V,

VDS = 400 V

20

nC

EOSS

Output capacitance stored energy

2.7

µJ

COSS

Output capacitance

20

pF

CO(ER)

Effective output capacitance energy

related(1)

VGS = 0 V,

VDS = 0 to 400 V

31

pF

CO(TR)

Effective output capacitance time

related(2)

50

pF

QRR

Reverse recovery charge

0

nC

IRRM

Reverse recovery current

0

A

1. CO(ER) is the fixed capacitance that would give the same stored energy as COSS while VDS is rising from 0 V to the stated

VDS

2. CO(TR) is the fixed capacitance that would give the same charging time as COSS while VDS is rising from 0 V to the stated

VDS

Table 8. Inductive load switching characteristics

Symbol

Parameter

Test condition

Min

Typ

Max

Unit

t(on)(1)

Turn-on time

VS = 400 V,

VGS = 6 V,

ID = 3.2 A

See Figure 3

70

ns

tC(on)(2)

Crossover time (on)

15

ns

t(off)(1)

Turn-off time

70

ns

tC(off)(2)

Crossover time (off)

15

ns

tSD

Shutdown to high/low-side propagation

delay

70

ns

Eon

Turn-on switching losses

12.5

µJ

Eoff

Turn-off switching losses

2.5

µJ

1. t(on) and t(off) include the propagation delay time of the internal driver

2. tC(on) and tC(off) are the switching times of GaN transistor itself under the internally given gate driving conditions

MASTERGAN1

Device characterization values

DS13417 - Rev 3

page 10/27