ST7LITEUSX datasheet(68/108 Pages) STMICROELECTRONICS

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ST7LITEUSx

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12.2 ABSOLUTE MAXIMUM RATINGS

Stresses above those listed as “absolute maxi-

mum ratings” may cause permanent damage to

the device. This is a stress rating only and func-

tional operation of the device under these condi-

tions is not implied. Exposure to maximum rating

conditions for extended periods may affect device

reliability.

12.2.1 Voltage Characteristics

12.2.2 Current Characteristics

12.2.3 Thermal Characteristics

Notes:

1. Directly connecting the I/O pins to VDD or VSS could damage the device if an unexpected change of the I/O configura-

tion occurs (for example, due to a corrupted program counter). To guarantee safe operation, this connection has to be

done through a pull-up or pull-down resistor (typical: 10k

Ω for I/Os). Unused I/O pins must be tied in the same way to V

or VSS according to their reset configuration.

2. IINJ(PIN) must never be exceeded. This is implicitly insured if VIN maximum is respected. If VIN maximum cannot be

respected, the injection current must be limited externally to the IINJ(PIN) value. A positive injection is induced by VIN>VDD

while a negative injection is induced by VIN<VSS.

3. All power (VDD) and ground (VSS) lines must always be connected to the external supply.

4. Negative injection disturbs the analog performance of the device. In particular, it induces leakage currents throughout

the device including the analog inputs. To avoid undesirable effects on the analog functions, care must be taken:

- Analog input pins must have a negative injection less than 0.8 mA (assuming that the impedance of the analog voltage

is lower than the specified limits)

- Pure digital pins must have a negative injection less than 1.6mA. In addition, it is recommended to inject the current as

far as possible from the analog input pins.

5. When several inputs are submitted to a current injection, the maximum

ΣI

INJ(PIN) is the absolute sum of the positive

and negative injected currents (instantaneous values). These results are based on characterisation with

ΣI

INJ(PIN) maxi-

mum current injection on four I/O port pins of the device.

Symbol

Ratings

Maximum value

Unit

VDD - VSS

Supply voltage

7.0

VIN

Input voltage on any pin 1) & 2)

VSS-0.3 to VDD+0.3

VESD(HBM)

Electrostatic discharge voltage (Human Body Model)

see section 12.7.2 on page 79

VESD(MM)

Electrostatic discharge voltage (Machine Model)

see section 12.7.2 on page 79

Symbol

Ratings

Maximum value

Unit

IVDD

Total current into VDD power lines (source)

IVSS

Total current out of VSS ground lines (sink)

150

IIO

Output current sunk by any standard I/O and control pin

Output current sunk by any high sink I/O pin

Output current source by any I/Os and control pin

-25

IINJ(PIN)

2) & 4)

Injected current on RESET pin

± 5

Injected current on any other pin 5)

± 5

ΣI

INJ(PIN)

Total injected current (sum of all I/O and control pins) 5)

± 20

Symbol

Ratings

Value

Unit

TSTG

Storage temperature range

-65 to +150

°C

Maximum junction temperature (see Section PACKAGE CHARACTERISTICS (Cont’d))

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