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STM32F427AI 数据表(PDF) 130 Page - STMicroelectronics

部件名 STM32F427AI
功能描述  32b Arm® Cortex®-M4 MCUFPU, 225DMIPS, up to 2MB Flash/2564KB RAM, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 20 com. interfaces, camera & LCD-TFT
PDF  240 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F427AI 数据表(HTML) 130 Page - STMicroelectronics

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Electrical characteristics
STM32F427xx STM32F429xx
130/240
DS9405 Rev 12
tBE
Bank erase time
Program/erase parallelism
(PSIZE) = x 8
-16
32
s
Program/erase parallelism
(PSIZE) = x 16
-11
22
Program/erase parallelism
(PSIZE) = x 32
-8
16
Vprog
Programming voltage
32-bit program operation
2.7
-
3.6
V
16-bit program operation
2.1
-
3.6
V
8-bit program operation
1.7
-
3.6
V
1. Evaluated by characterization.
2. The maximum programming time is measured after 100 K erase operations.
Table 49. Flash memory programming with VPP
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1)
1. Specified by design.
Unit
tprog
Double word programming
TA = 0 to +40 °C
VDD = 3.3 V
VPP = 8.5 V
-16
100(2)
2. The maximum programming time is measured after 100 K erase operations.
µs
tERASE16KB Sector (16 KB) erase time
-
230
-
ms
tERASE64KB Sector (64 KB) erase time
-
490
-
tERASE128KB Sector (128 KB) erase time
-
875
-
tME
Mass erase time
-
6.9
-
s
tBE
Bank erase time
-
-
6.9
-
s
Vprog
Programming voltage
-
2.7
-
3.6
V
VPP
VPP voltage range
-
7
-
9
V
IPP
Minimum current sunk on
the VPP pin
-10
-
-
mA
tVPP(3)
3. VPP should only be connected during programming/erasing.
Cumulative time during
which VPP is applied
-
-
-
1
hour
Table 48. Flash memory programming (continued)
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1) Unit



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