STM32F427AI datasheet(133/240 Pages) STMICROELECTRONICS

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DS9405 Rev 12

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STM32F427xx STM32F429xx

Electrical characteristics

197

Table 53. EMI characteristics for HSE= 25 MHz and fCPU= 180 MHz

6.3.15

Absolute maximum ratings (electrical sensitivity)

Based on three different tests (ESD, LU) using specific measurement methods, the device is

stressed to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test

conforms to the ANSI/ESDA/JEDEC JS-001 and ANSI/ESD S5.3.1 standards.

Symbol Parameter

Conditions

Monitored

frequency band

Max vs.

[fHSE/fCPU]

Unit

25/180 MHz

SEMI

Peak(1)

VDD = 3.3 V, TA = 25 °C, LQFP176

package, conforming to SAE J1752/3

EEMBC, ART ON, all peripheral

clocks enabled, clock dithering

disabled.

0.1 to 30 MHz

dBµV

30 to 130 MHz

130 MHz to

1GHz

Level(2)

0.1 MHz to

1GHz

Peak(1)

VDD = 3.3 V, TA = 25 °C, LQFP176

package, conforming to SAE J1752/3

EEMBC, ART ON, all peripheral

clocks enabled, clock dithering

enabled

0.1 to 30 MHz

dBµV

30 to 130 MHz

130 MHz to

1GHz

Level(2)

0.1 MHz to

1GHz

3.5

1. Refer to chapter “EMI radiated test” in AN1709.

2. Refer to chapter “EMI level classification” in AN1709.

Table 54. ESD absolute maximum ratings

Symbol

Ratings

Conditions

Class

Maximum

value(1)

Unit

VESD(HBM)

Electrostatic discharge

voltage (human body

model)

TA = +25 °C conforming to

ANSI/ESDA/JEDEC JS-001

2000

VESD(CDM)

Electrostatic discharge

voltage (charge device

model)

TA = +25 °C conforming to ANSI/ESD S5.3.1,

LQFP100/144/176, UFBGA169/176,

TFBGA176 and WLCSP143 packages

250

TA = +25 °C conforming to ANSI/ESD S5.3.1,

LQFP208 package

250

1. Evaluated by characterization.

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