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ADP5020ACPZ-R7 数据表(PDF) 4 Page - Analog Devices |
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ADP5020ACPZ-R7 数据表(HTML) 4 Page - Analog Devices |
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4 / 28 page ![]() ADP5020 Rev. 0 | Page 4 of 28 SPECIFICATIONS TJ = −40°C to +125°C, VDDx = 3.6 V, VDD_IO = 1.8 V, unless otherwise noted. Table 1. Parameter Symbol Conditions Min Typ Max Unit OPERATING RANGE VDDx Operating Voltage Range VDD 2.4 5.5 V Logic I/O Operating Voltage Range1 VDD_IO 1.7 3.6 V EN, SDA, SCL CHARACTERISTICS Low Level Input Voltage VIL 0.3 × VDD_IO V High Level Input Voltage VIH 0.7 × VDD_IO V INPUT LOGIC CURRENT ILK Internal pull-down, 1 MΩ −1 +6 μA XSHTDN, EN/GPIO Low Level Output Voltage VOL IRST = +3 mA 0.2 × VDD_IO V High Level Output Voltage VOH IRST = −3 mA 0.8 × VDD_IO V OUTPUT LOGIC LEAKAGE CURRENT ILK 1 μA UNDERVOLTAGE LOCKOUT THRESHOLD Falling VUVLOF Referenced to VDDA 1.8 2.0 V Rising VUVLOR Referenced to VDDA 2.2 2.4 V POWER-ON RESET THRESHOLD Falling VPORF Referenced to VDDA 1.0 1.4 V Rising VPORR Referenced to VDDA 1.6 1.7 V UVLO GLITCH DEBOUNCE TIME VDD > POR levels 50 μs SHUTDOWN OUTPUT DURATION2 tXSHTDN XSHTDN line driven low 1 ms POWER GOOD (POK) ACTIVATION DELAY TIME3 EN to First Regulator tREG1 5 ms First to Second Regulator tREG2 5 ms Second to Third Regulator tREG3 5 ms NO LOAD CURRENT CHARACTERISTICS Standby Current IQ(STNBY) EN = 0 1 5 μA Lockout Current ILOCK EN = 0, VDDA < VUVLOF 1 1 μA Operating Quiescent Current, Switching4 IQ ILOAD = 0 mA 10 15 mA THERMAL CHARACTERISTICS Thermal Shutdown, TJ Rising TSD 150 °C Thermal Shutdown Hysteresis 30 °C HOUSEKEEPING BLOCK Power Good Threshold VPG 70 80 90 % 1 The VDD_IO voltage must be less than or equal to the level on the VDDx supply lines. 2 Shutdown output duration is automatic when using the EN pin. To get this delay when using I2C, FORCE_XS must be set to 1. 3 Activation delays apply only when the device is activated through the EN pin or the EN_ALL bit (Address 0x03[4]); the sequencer controls the turning on of the regulators. 4 The quiescent current is calculated as though all regulators are powered up. |
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