AFS090 datasheet(60/334 Pages) MICROSEMI

60 / 334 page

Device Architecture

2- 44

R e visio n 2

Flash Memory Block Diagram

A simplified diagram of the flash memory block is shown in Figure 2-33.

The logic consists of the following sub-blocks:

•

Flash Array

Contains all stored data. The flash array contains 64 sectors, and each sector contains 33 pages

of data.

•

Page Buffer

A page-wide volatile register. A page contains 8 blocks of data and an AUX block.

•

Block Buffer

Contains the contents of the last block accessed. A block contains 128 data bits.

•

ECC Logic

The FB stores error correction information with each block to perform single-bit error correction and

double-bit error detection on all data blocks.

Figure 2-33 • Flash Memory Block Diagram

ADDDR[17:0]

DATAWIDTH[1:0]

REN

READNEXT

PAGESTATUS

WEN

ERASEPAGE

PROGRAM

SPAREPAGE

AUXBLOCK

UNPROTECTPAGE

OVERWRITEPAGE

DISCARDPAGE

OVERWRITEPROTECT

PAGELOSSPROTECT

PIPE

LOCKREQUEST

CLK

RESET

STATUS[1:0]

BUSY

Control

Logic

Output

MUX

Block Buffer

(128 bits)

ECC

Logic

Flash Array = 64 Sectors

RD[31:0]

WD[31 :0]

Page Buffer = 8 Blocks

Plus AUX Block

AFS090 数据表(PDF) 60 Page - Microsemi Corporation

AFS090 数据表(HTML) 60 Page - Microsemi Corporation

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

数据表下载