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MMPF0100 数据表(PDF) 52 Page - Freescale Semiconductor, Inc |
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MMPF0100 数据表(HTML) 52 Page - Freescale Semiconductor, Inc |
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52 / 136 page ![]() Analog Integrated Circuit Device Data 52 Freescale Semiconductor PF0100 Functional Block Requirements and Behaviors Power Generation SW1C (INDEPENDENT) (CONTINUED) SW1C P-MOSFET RDSON at VINSW1C = 3.3 V RONSW1CP – 184 206 m Ω SW1C N-MOSFET RDSON at VINSW1C = 3.3 V RONSW1CN – 211 260 m Ω SW1C P-MOSFET Leakage Current VINSW1C = 4.5 V ISW1CPQ –– 10.5 µA SW1C N-MOSFET Leakage Current VINSW1C = 4.5 V ISW1CNQ –– 3.5 µA Discharge Resistance RSW1CDIS – 600 – Ω Notes 33. Meets 1.89 A current rating for VDDSOC_IN domain on i.MX6X processor. 34. Current rating of SW1AB supports the Power Virus mode of operation of the i.MX6X processor. Table 53. SW1A/B/C Electrical Characteristics All parameters are specified at TA = -40 to 85 °C, VIN = VINSW1x = 3.6 V, VSW1x = 1.2 V, ISW1x = 100 mA, SW1x_PWRSTG[2:0] = [111], typical external component values, fSW1x = 2.0 MHz, unless otherwise noted. Typical values are characterized at VIN = VINSW1x = 3.6 V, VSW1x = 1.2 V, ISW1x = 100 mA, SW1x_PWRSTG[2:0] = [111], and 25 °C, unless otherwise noted. Parameter Symbol Min Typ Max Unit |
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