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SPC56AP54X 数据表(PDF) 80 Page - STMicroelectronics

部件名 SPC56AP54X
功能描述  32-bit Power Architecture® based MCU with 1088 KB Flash memory and 80 KB RAM for automotive chassis and safety applications
PDF  104 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

SPC56AP54X 数据表(HTML) 80 Page - STMicroelectronics

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Electrical characteristics
SPC56xP54x, SPC56xP60x
80/104
Doc ID 18340 Rev 3
3.15.2
ADC conversion characteristics
Table 32.
ADC conversion characteristics
Symbol
Parameter
Conditions(1)
Value
Unit
Min
Typ
Max
VINAN
SR Analog input voltage(2)
VSS_HV_AD
0.3
VSS_HV_AD
+ 0.3
V
fCK
SR
ADC Clock frequency
(depends on ADC
configuration)
(The duty cycle depends
on AD_clk(3) frequency)
—3(4)
—60
MHz
fs
SR Sampling frequency
1.53
MHz
tADC_S
D
Sample time(5)
fADC = 20 MHz,
INPSAMP = 3
125
ns
fADC = 9 MHz,
INPSAMP = 255
——
28.2
µs
tADC_C
PConversion time(6)
fADC = 20 MHz
(7),
INPCMP = 1
0.650
µs
CS
(8)
D
ADC input sampling
capacitance
——
2.5
pF
CP1
(8)
D
ADC input pin capacitance
1
——
3
pF
CP2
(8)
D
ADC input pin capacitance
2
——
1
pF
CP3
(8)
D
ADC input pin capacitance
3
——
1
pF
RSW1
(8)
D
Internal resistance of
analog source
VDD_HV_AD = 5 V ±10%
0.6
k
VDD_HV_AD = 3.3 V ±10%
3
k
RSW2
(8)
D
Internal resistance of
analog source
VDD_HV_AD = 5 V ±10%
2.15
k
VDD_HV_AD = 3.3 V ±10%
3.6
k
RAD
(8)
D
Internal resistance of
analog source
——
2
k
IINJ
T
Input current injection
Current injection on one ADC
input, different from the
converted one. Remains within
TUE spec.
–5
5
mA
INL
P
Integral Non Linearity
No overload
±1.5
LSB
DNL
P
Differential Non Linearity
No overload
–1.0
1.0
LSB
OFS
T
Offset error
±1
LSB
GNE
T
Gain error
±1
LSB
TUE
P
Total unadjusted error
without current injection
16 precision channels
–2.5
2.5
LSB



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