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DRV8701PRGET 数据表(PDF) 20 Page - Texas Instruments |
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DRV8701PRGET 数据表(HTML) 20 Page - Texas Instruments |
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20 / 42 page ![]() IDRIVE ««« IDRIVE RIDRIVE IDRIVE ««« IDRIVE AVDD RIDRIVE IDRIVE AVDD ««« IDRIVE + - 2.5V + - 1.3V + - 0.1V + - 3.7V + - 4.3V AVDD 190k 310k Digital Core DRV8701 SLVSCX5B – MARCH 2015 – REVISED JULY 2015 www.ti.com 7.3.6 IDRIVE Pin The rise and fall times of the H-bridge output (SHx pins) can be adjusted by setting the IDRIVE resistor value or forcing a voltage onto the IDRIVE pin. The FET gate voltage ramps faster if a higher IDRIVE setting is chosen. The FET gate ramp directly affects the H-bridge output rise and fall time. Tying IDRIVE to GND selects the lowest drive setting of 6-mA source and 12.5-mA sink. If this pin is left unconnected, then the 100-mA source and 200-mA sink setting are selected. If IDRIVE is shorted to AVDD, then the VDS OCP monitor on the high-side FETs is disabled. In this setting, the gate driver is configured as 25-mA source and 50-mA sink. Figure 27. IDRIVE Pin Internal Circuitry Table 5. IDRIVE Pin Configuration Settings Source Current IDRIVE Resistance IDRIVE Voltage Sink Current (IDRIVE,SNK) HS OCP Monitor (IDRIVE,SRC) <1 k Ω to GND GND 6 mA 12.5 mA ON 33 k Ω ±5% to GND 0.7 V ±5% 12.5 mA 25 mA ON 200 k Ω ±5% to GND 2 V ±5% 25 mA 50 mA ON >500 k Ω to GND, High-Z 3 V ±5% 100 mA 200 mA ON 68 k Ω ±5% to AVDD 4 V ±5% 150 mA 300 mA ON <1 k Ω to AVDD AVDD 25 mA 50 mA OFF Table 6. IDRIVE Pin Resistor Settings 33 k Ω ±5% to GND <1 k Ω to GND >500 k Ω to GND, High-Z 68 k Ω ±5% to AVDD <1 k Ω to AVDD 200 k Ω ±5% to GND IDRIVE IDRIVE IDRIVE IDRIVE IDRIVE 12.5 / 25 mA (33 k Ω) 25 / 50 mA 6 / 12.5 mA 100 / 200 mA 150 / 300 mA 25 / 50 mA (200 k Ω) HS OCP monitor off 20 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: DRV8701 |
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