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STGAP1STR 数据表(PDF) 11 Page - STMicroelectronics

部件名 STGAP1STR
功能描述  gapDRIVE™: galvanically isolated single gate driver
PDF  67 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGAP1STR 数据表(HTML) 11 Page - STMicroelectronics

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DocID027190 Rev 3
11/67
STGAP1S
Electrical data
67
3
Electrical data
3.1
Absolute maximum ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Test condition
Min.
Max.
Unit
dVISO/dt
Common mode transient immunity
VCM = 1500 V
50
V/ns
VDD
Integrated 3.3 V voltage regulator
input voltage vs. GND
-0.30
6.50
V
VREG
Integrated 3.3 V voltage regulator
output voltage vs. GND
-0.30
3.60
V
VREG_ISO
Isolated logic supply voltage vs.
GNDISO
-0.30
3.60
V
VLOGIC
Logic pins voltage vs. GND
-0.30
VDD + 0.30
V
VHL
Differential supply voltage
(VH vs. VL)
-0.30
40
V
VH
Positive supply voltage
(VH vs. GNDISO)
-0.30
40
V
VL
Negative supply voltage
(VL vs. GNDISO)
-15
0.30
V
VOUT
Voltage on gate driver outputs
(GON, GOFF, CLAMP vs. VL)
VL - 0.30
VH + 0.30
V
VDESAT
Voltage on DESAT pin vs. GNDISO
-0.30
VH + 0.30
V
VSENSE
Voltage on SENSE pin vs. GNDISO
-2
(VH + 0.30, 20)min
V
VCECLAMP Voltage on VCECLAMP pin vs. VL
VL - 0.30
VH + 0.30
V
VASC
Voltage on ASC pin vs. GNDISO
-0.30
VH + 0.30
V
IDIAGx
Open drain DC output current
VDIAGx < 0.8 V
20
mA
VDIAGx
Open drain output voltage
-0.30
6.50
V
TJ
Junction temperature
-40
150
°C
TS
Storage temperature
-50
150
°C
TA
Ambient temperature
-40
125
°C
PDin
Power dissipation input chip
fsw = 1 MHz
65
mW
PDout
Power dissipation output chip
(TJ,max - TA)/Rth(JA) - PDin
W
dH/dt
Magnetic field immunity
100
A/(m·s)
ESD
Human body model
2
kV



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