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STGAP1STR 数据表(PDF) 34 Page - STMicroelectronics

部件名 STGAP1STR
功能描述  gapDRIVE™: galvanically isolated single gate driver
PDF  67 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGAP1STR 数据表(HTML) 34 Page - STMicroelectronics

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Functional description
STGAP1S
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DocID027190 Rev 3
7.10.1
Always
The 2LTO is performed at each turn-off transition (2LTO_EN = '1').
When 2LTO is used at each transition the minimum on or off pulse width is determined by
2LTO time. Some sample waveforms are given in Figure 14 and Figure 15, where INAND
represents the condition: < IN+ = 'H' and IN- = 'L' >.
If a turn-on pulse is shorter than t2LTOtime it shall be ignored; turn-on pulses longer than
t2LTOtime will determine a delay in the turn-on equal to t2LTOtime (see Figure 14).
Figure 14. Example of short turn-on pulses when 2LTO occurs at each cycle
When a turn-off pulse is detected the turn-off procedure starts immediately by forcing the
V2LTOth voltage on the GOFF pin. If the duration of the turn-off pulse is shorter than t2LTOtime
the turn-off sequence is aborted by setting GOFF in high impedance and turning GON on
again (see Figure 15).
Figure 15. Example of short turn-off pulse when 2LTO occurs at each cycle
When the 2LTO is used at each cycle, any event that forces the device to enter in “safe
state” generates a driver switch off performing a 2LTO sequence.
7.10.2
Fault
The 2LTO is performed only after a desaturation or overcurrent event (2LTO_EN = '0'). In
such cases the device enters in “safe state” until the failure flag is released. See
Section 7.11 for indication on how the failure flags can be released.
t2LTOtime
ONtime
t2LTOtime
t2LTOtime
t2LTOtime
t2LTOtime
INAND
GON-GOFF
tDon
ONtime
ONtime
t2LTOtime
tDon
ONtime
tDoff
tDoff
ON-time < t2LTOtime
ON-time < t2LTOtime
ON-time > t2LTOtime
ON-time > t2LTOtime
t2LTOtime
tDoff
INAND
GON-GOFF
t2LTOtime
tDoff
t2LTOtime
tDoff
tDon
OFF-time > t2LTOtime
OFF-time < t2LTOtime
OFF-time > t2LTOtime



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