STGAP1STR datasheet(17/67 Pages) STMICROELECTRONICS

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STGAP1S

Electrical characteristics

tBLK

DESAT protection fixed

blanking time

160

250

340

tDESAT

DESAT protection

intervention time

VDESAT = VDESAth to

GOFF 90%

CLOAD = 10 nF

2LTO disabled

150

220

SENSE overcurrent function

VSENSEth

SENSE protection

threshold

SENSEth = '000'

100

112

SENSEth = '001'

110

125

140

SENSEth = '010'

135

150

165

SENSEth = '011'

158

175

192

SENSEth = '100'

185

200

215

SENSEth = '101'

235

250

268

SENSEth = '110'

285

300

315

SENSEth = '111'

380

400

420

tSENSE

SENSE protection

intervention time

SENSEth = '111'

1 V step on VSENSE

to GOFF 90%;

CLOAD = 10 nF

2LTO disabled

120

2-level turn-off function

V2LTOth

2LTO threshold

2LTOth = '0000'

6.65

7.00

7.35

2LTOth = '0001'

7.12

7.50

7.88

2LTOth = '0010'

7.60

8.00

8.40

2LTOth = '0011'

8.07

8.50

8.93

2LTOth = '0100'

8.55

9.00

9.45

2LTOth = '0101'

9.02

9.50

9.98

2LTOth = '0110'

9.50

10.00

10.50

2LTOth = '0111'

9.97

10.50

11.03

2LTOth = '1000'

10.45

11.00

11.55

2LTOth = '1001'

10.92

11.50

12.08

2LTOth = '1010'

11.40

12.00

12.60

2LTOth = '1011'

11.87

12.50

13.13

2LTOth = '1100'

12.35

13.00

13.65

2LTOth = '1101'

12.82

13.50

14.18

2LTOth = '1110'

13.30

14.00

14.70

2LTOth = '1111'

13.77

14.50

15.23

Table 6. DC operation electrical characteristics

(Tj = -40 to 125 °C, VDD = 5 V; VH = 15 V, VL = GNDISO) (continued)

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

STGAP1STR 数据表(PDF) 17 Page - STMicroelectronics

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