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ENICSF2811PBKA 数据表(PDF) 157 Page - Texas Instruments |
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ENICSF2811PBKA 数据表(HTML) 157 Page - Texas Instruments |
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157 / 172 page  TMS320F2810, TMS320F2811, TMS320F2812 TMS320C2810, TMS320C2811, TMS320C2812 www.ti.com SPRS174T – APRIL 2001 – REVISED MAY 2012 6.32 Flash Timing (F281x Only) Table 6-60. Flash Endurance for A and S Temperature Material(1) ERASE/PROGRAM MIN TYP MAX UNIT TEMPERATURE Nf Flash endurance for the array (Write/Erase cycles) 0°C to 85°C (ambient) 20000(2) 50000(2) cycles NOTP OTP endurance for the array (Write cycles) 0°C to 85°C (ambient) 1 write (1) Write/erase operations outside of the temperature ranges indicated are not specified and may affect the endurance numbers. (2) The Write/Erase cycle numbers of 20000 (MIN) and 50000 (TYP) are applicable only for silicon revision G. For older silicon revisions, the Write/Erase cycle numbers of 100 (MIN) and 1000 (TYP) are applicable. Table 6-61. Flash Endurance for Q Temperature Material(1) ERASE/PROGRAM MIN TYP MAX UNIT TEMPERATURE Nf Flash endurance for the array (Write/Erase cycles) –40°C to 125°C (ambient) 20000(2) 50000(2) cycles NOTP OTP endurance for the array (Write cycles) –40°C to 125°C (ambient) 1 write (1) Write/erase operations outside of the temperature ranges indicated are not specified and may affect the endurance numbers. (2) The Write/Erase cycle numbers of 20000 (MIN) and 50000 (TYP) are applicable only for silicon revision G. For older silicon revisions, the Write/Erase cycle numbers of 100 (MIN) and 1000 (TYP) are applicable. Table 6-62. Flash Parameters at 150-MHz SYSCLKOUT(1) PARAMETER MIN TYP MAX UNIT Using Flash API v1(2) 35 16-Bit Word µs Using Flash API v2.10 50 Using Flash API v1(2) 170 Program Time 8K Sector ms Using Flash API v2.10 250 Using Flash API v1(2) 320 16K Sector ms Using Flash API v2.10 500 8K Sector 10 Erase Time(3) s 16K Sector 11 Erase 75 IDD3VFLP VDD3VFL current consumption during the Erase/Program cycle mA Program 35 IDDP VDD current consumption during Erase/Program cycle 140 mA IDDIOP VDDIO current consumption during Erase/Program cycle 20 mA (1) Typical parameters as seen at room temperature including function call overhead, with all peripherals off. (2) Flash API v1.00 is useable on rev. C silicon only. (3) The on-chip flash memory is in an erased state when the device is shipped from TI. As such, erasing the flash memory is not required prior to programming, when programming the device for the first time. However, the erase operation is needed on all subsequent programming operations. Copyright © 2001–2012, Texas Instruments Incorporated Electrical Specifications 157 Submit Documentation Feedback Product Folder Link(s): TMS320F2810 TMS320F2811 TMS320F2812 TMS320C2810 TMS320C2811 TMS320C2812 |
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