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STM8TL52X4 数据表(PDF) 52 Page - STMicroelectronics |
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STM8TL52X4 数据表(HTML) 52 Page - STMicroelectronics |
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52 / 84 page  Electrical parameters STM8TL52x4 STM8TL53x4 52/84 DocID022344 Rev 7 9.3.6 Clock and timing characteristics Internal clock source The parameters given in Table 24 are derived from tests performed under ambient temperature and VDD supply voltage. They are subject to general operating conditions for VDD and TA. High speed internal RC oscillator Figure 14. Typical HSI frequency vs. VDD Table 24. HSI oscillator characteristics(1) 1. VDD = 3V, TA = 40 to 125 °C, unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Unit fHSI Frequency VDD = 3.0 V - 16 - MHz ACCHSI Accuracy of HSI oscillator (factory calibrated) VDD = 3.0 V, TA = 25 °C 1- 1 % 1.65 V VDD 3.6 V, TA = -40 to 85°C 3- 3 % IDD(HSI) HSI oscillator power consumption - 70 100 µA |
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