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STM8TL52X4 数据表(PDF) 69 Page - STMicroelectronics

部件名 STM8TL52X4
功能描述  Operating conditions
PDF  84 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM8TL52X4 数据表(HTML) 69 Page - STMicroelectronics

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STM8TL52x4 STM8TL53x4
Electrical parameters
70
Electromagnetic interference (EMI)
Based on a simple application running on the product (toggling 2 LEDs through the I/O
ports), the product is monitored in terms of emission. This emission test is in line with the
norm SAE J 1752/3 which specifies the board and the loading of each pin.
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models
can be simulated: human body model and charge device model. This test conforms to the
JESD22-A114A/A115A standard.
Table 36. EMS data
Symbol
Parameter
Conditions
Level/
Class
VFESD
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
UFQFPN48, VDD 3.3 V
3B
VEFTB
Fast transient voltage burst limits to be
applied through 100 pF on VDD and VSS
pins to induce a functional disturbance
UFQFPN48, VDD 3.3 V, fHSI
3B
Table 37. EMI data (1)
1. Not tested in production.
Symbol
Parameter
Conditions
Monitored frequency
band
Max vs. 16
MHz
Unit
SEMI
Peak level
VDD 3.6 V,
TA +25 °C
0.1 MHz to 30 MHz
-5
dB
V
30 MHz to 130 MHz
-5
130 MHz to 1 GHz
0
SAE EMI Level
1
-
Table 38. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Maximum
value (1)
1. Data based on characterization results, not tested in production.
Unit
VESD(HBM)
Electrostatic discharge voltage
(human body model)
TA +25 °C
2000(2)
2. Device sustained up to 3000 V during ESD trials.
V
VESD(CDM)
Electrostatic discharge voltage
(charge device model)
1000



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