STM32L162VC datasheet(80/123 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32L162VC, STM32L162RC

80/123

DocID022881 Rev 10

6.3.13

I/O port characteristics

General input/output characteristics

Unless otherwise specified, the parameters given in Table 49 are derived from tests

performed under the conditions summarized in Table 14. All I/Os are CMOS and TTL

compliant.

Table 43. I/O static characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VIL

Input low level voltage

TC and FT I/O

0.3 VDD(1)(2)

BOOT0

0.14 VDD(2)

VIH

Input high level voltage

TC I/O

0.45 VDD+0.38(2)

FT I/O

0.39 VDD+0.59(2)

BOOT0

0.15 VDD+0.56(2)

Vhys

I/O Schmitt trigger voltage

hysteresis(2)

TC and FT I/O

10% VDD(3)

BOOT0

0.01

Ilkg

Input leakage current (4)

VSS ≤VIN ≤VDD

I/Os with LCD

±50

VSS ≤VIN ≤VDD

I/Os with analog

switches

±50

VSS ≤VIN ≤VDD

I/Os with analog

switches and LCD

±50

VSS ≤VIN ≤VDD

I/Os with USB

±250

VSS ≤VIN ≤VDD

TC and FT I/Os

±50

FT I/O

VDD ≤VIN ≤5V

±10

µA

RPU

Weak pull-up equivalent

resistor(5)(1)

VIN = VSS

RPD

Weak pull-down equivalent

resistor(5)

VIN = VDD

CIO

I/O pin capacitance

1. Guaranteed by test in production

2. Guaranteed by design.

3. With a minimum of 200 mV.

4. The max. value may be exceeded if negative current is injected on adjacent pins.

5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This

MOS/NMOS contribution to the series resistance is minimum (~10% order).

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