| 数据搜索系统,热门电子元器件搜索 |
|
MFC2000 数据表(PDF) 21 Page - List of Unclassifed Manufacturers |
|
|
|||||||||||||||||||||||||||||
MFC2000 数据表(HTML) 21 Page - List of Unclassifed Manufacturers |
|
21 / 426 page ![]() Multifunctional Peripheral Controller 2000 MFC2000 100723A Conexant 3-1 3. Hardware Interface 3.1 Pin Description Table 3-1. Pin Description (1 of 6) Pin Name Pin No. I/O Input Type Output Type Pin Description PRTIRQn U14 I HU5VT - (Hysteresis, Pull up) Interrupt from the external printing ASIC (active low) AUXCLK K20 O - 2XT3V Auxiliary clock output for using as the master clock for external devices A[11:0]/A[23:12] A20,B20,B19,B 18,B17,C20,C1 9,C18,C17,D20, D19,D18 I/O 5VT 3XT5VT Address bus (12-bit), A[23:12] and A[11:0] are muxed out through same pins. ALE C16 O - 2XT5VT Address Latch output signal for latching A[23:12] externally AE[2]/GPO[14]/SSTXD2/ ROM_CONFIG[0] A19 I/O D5VT 2XT5VT (Pull down) Address bit for external ROM mux in the ROM interleave access mode or GPO[14] or TX data output for SSIF2 (ROM_CONFIG[0] input during the reset period) AO[2]/GPO[15]/SSSTAT2/RO M_CONFIG[1] A18 I/O D5VT 2XT5VT (Pull down) Address bit for external ROM mux in the ROM interleave access mode or GPO[15] or Status input for SSIF2 (ROM_CONFIG[1] input during the reset period) AE[3]/GPO[16]/ CLK_CONFIG[0] A17 I/O D5VT 2XT5VT (Pull down) Address bit for external ROM mux in the ROM interleave access mode or GPO[16] (CLK_CONFIG[0] input during the reset period) AO[3]/GPO[17]/ CLK_CONFIG[1] D16 I/O D5VT 2XT5VT (Pull down) Address bit for external ROM mux in the ROM interleave access mode or GPO[17] (CLK_CONFIG[1] input during the reset period) D[15:0] A12,B12,C12,A 13,B13,C13,D1 3,A14,B14,C14, A15,B15,C15,D 15,A16,B16 I/O 5VT 2XT5VT Data bus (16-bit) RDn D12 O - 3XT5VT Read strobe (active low) WREn/DOEEn B9 O - 4XT5VT Write strobe for the lower byte (active low) or DRAM output enables selects used for non- interleave mode and interleave modes. DOEEn is used for reading the even address bank (active low). WROn/DOEOn C9 O - 4XT5VT Write strobe for the higher byte (active low) or DRAM output enables selects used for non- interleave mode and interleave modes. DOEOn is used for reading the odd address bank (active low). ROMCSn D10 O - 2XT5VT ROM chip select (active low) CS[1]n A9 O - 2XT5VT I/O chip select (active low). CS[0]n G18 O 3V 2XT3V SRAM chip select (active low) (VRTC powered) RASn[1:0] F19,F18 O - 2XT3V DRAM row Address select for bank 0 and 1(active low) (VDRAM powered) CASOn[1:0] E17,F20 O - 2XT3V DRAM column odd address selects used for non- interleave mode and interleave mode. (VDRAM powered) |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |