DA6505.005

11 June 2018

2 (44)

BLOCK DIAGRAM

Figure 1. MAS6505 block diagram

ABSOLUTE MAXIMUM RATINGS

All Voltages with Respect to Ground (GND)

Parameter

Symbol

Conditions

Min

Max

Unit

Supply Voltage

-0.3

7.0

V

Serial Bus Voltage

-0.3

7.0

V

Serial Bus Pins

SDI, SDO, SCK, CSB

-0.3

whichever is smaller

V

Sensor Pins

VDDS, PI, NI, GNDS,

TD, Note 1.

-0.3

2.3V

V

Latchup Current Limit

For all pins, test

according to JESD78A.

-100

+100

mA

Junction Temperature

+ 150

°C

Storage Temperature

Note 2

- 50

+125

°C

ESD Rating

Note 3

±2000

V

Note 4

±500V

V

Note: The absolute maximum rating values are stress ratings only. Functional operation of the device at conditions between maximum operating

conditions and absolute maximum ratings is not implied and EEPROM contents may be corrupted. Exposure to these conditions for extended

periods may affect device reliability (e.g. hot carrier degradation, oxide breakdown). Applying conditions above absolute maximum ratings may

be destructive to the devices.

Note: This is a CMOS device and therefore it should be handled carefully to avoid any damage by static voltages (ESD).

Note 1: Voltage rating applies to TD pin when an external temperature sensing diode or test mode STEST=1001 is selected. In other operating

modes the TD pin voltage rating is 7.0V.

Note 2: See EEPROM memory data retention at hot temperature. Storage or bake at hot temperatures will reduce wafer level trimming and

calibration data retention time.

Note 3: JEDEC document JEP155 states that 500V HBM allows safe manufacturing with a standard ESD control process.

Note 4: JEDEC document JEP157 states that 250V CDM allows safe manufacturing with a standard ESD control process.

RECOMMENDED OPERATION CONDITIONS

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Supply Voltage

A/D conversions

EEPROM read

EEPROM write, Note 1

1.71

1.71

4.5

1.8

1.8

5.0

5.5

5.5

5.5

V

Serial Bus Voltage

1.2

1.8

5.5

V

Operating Temperature

-40

+25

+90

°C

EEPROM Write

Temperature

Note 1

+10

+25

+40

°C

Note 1: EEPROM write operation requires typical 5.0V supply voltage but EEPROM read operation has wide supply voltage range from 1.71V

to 5.5V. EEPROM write operation is recommended to be done at room temperature.

R2

R4

R1

R3

ADC

PI

NI

GNDS

VDDS

P

T

P

T

P

T

T

GND

VDD

CONTROL

VREFN

VREFP

OSC

EEPROM

SCK

MAS6505

SDO

CSB

VDDIO

TEST

MUX

SDO

VDDS

AFE

SDI

I2C/

SPI

GND

TD

REG